IS61C5128AL-10TLI-TR ISSI, Integrated Silicon Solution Inc, IS61C5128AL-10TLI-TR Datasheet - Page 10

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IS61C5128AL-10TLI-TR

Manufacturer Part Number
IS61C5128AL-10TLI-TR
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61C5128AL-10TLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE
IS61C5128AL/AS
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE
10
ADDRESS
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
D
OUT
WE
D
CE
IN
DATA UNDEFINED
t
SA
WE
WE Controlled)
WE
WE
IS64C5128AL/AS
V
IH
.
(1,2)
t
HZWE
t
VALID ADDRESS
AW
t
t
PWE1
PWE2
t
t
SCS
WC
HIGH-Z
Integrated Silicon Solution, Inc. — www.issi.com
t
SD
DATA
IN
VALID
t
HD
t
LZWE
t
HA
CE_WR1.eps
03/04/2008
Rev. B

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