IS61LV25616AL-10T-TR ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10T-TR Datasheet - Page 4

• Manufacturer Part Number: IS61LV25616AL-10T-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV25616AL-10T-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
IS61LV25616AL
Symbol Parameter
V
T
P
Range
Commercial
Industrial
Symbol
V
V
V
V
I
I
STG
TERM
T
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
LI
LO
OH
IL
OL
IH
IL
(min.) = –2.0V for pulse width less than 10 ns.
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
–40°C to +85°C
0°C to +70°C
(1)
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
DD
DD
Integrated Silicon Solution, Inc. — www.issi.com —
= Min., I
= Min., I
(Over Operating Range)
3.3V +10%, -5%
3.3V +10%, -5%
OUT
IN
–0.5 to V
≤ V
–65 to +150
OH
≤ V
OL
DD
Value
10ns
= 8.0 mA
= –4.0 mA
1.0
DD
DD
+0.5
V
DD
Unit
°C
W
V
3.3V + 10%
3.3V + 10%
Com.
Com.
Ind.
Ind.
12ns
Min.
–0.3
2.4
2.0
—
–2
–5
–2
–5
V
DD
Max.
0.4
0.8
—
2
5
2
5
ISSI
+ 0.3
1-800-379-4774
Unit
02/14/06
µA
µA
Rev. E
V
V
V
V
®