IS61LV25616AL-10T-TR ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10T-TR Datasheet - Page 5

• Manufacturer Part Number: IS61LV25616AL-10T-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV25616AL-10T-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV25616AL
POWER SUPPLY CHARACTERISTICS
Note:
1. At f = f
Shaded area product in development
CAPACITANCE
Note:
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
02/14/06
Symbol Parameter
I
I
I
I
CC
SB
SB
SB
Symbol
C
C
1. Tested initially and after any design or process changes that may affect these parameters.
1
2
IN
OUT
MAX
V
Supply Current
TTL Standby Current
(TTL Inputs)
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Dynamic Operating
Parameter
Input Capacitance
Input/Output Capacitance
(1)
Test Conditions
V
I
V
V
CE ≥ V
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
DD
DD
IN
DD
IN
DD
IN
IN
= V
= V
≥ V
≤ 0.2V, f = 0
= Max.,
= Max.,
= Max.,
= Max.,
= 0 mA, f = f
IH
IH
DD
DD
IH
IH
, f = f
, f = 0
or V
or V
– 0.2V,
– 0.2V, or
IL
IL
MAX
MAX
.
(1)
Conditions
Com.
Com.
Com.
Com.
V
(Over Operating Range)
V
Ind.
Ind.
Ind.
Ind.
OUT
IN
= 0V
= 0V
1-800-379-4774
Min. Max.
—
—
—
—
—
—
—
Max.
—
-10
6
8
100
110
50
55
20
25
15
20
Min. Max.
Unit
—
—
—
—
—
—
—
—
pF
pF
-12
100
90
45
50
20
25
15
20
Unit
mA
mA
mA
mA
ISSI
®
5
1
2
3
4
5
6
7
8
9
10
11
12