IS61LV25616AL-10T-TR ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10T-TR Datasheet - Page 6

• Manufacturer Part Number: IS61LV25616AL-10T-TR
• Description: IC SRAM 4MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV25616AL-10T-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (256K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 1
6
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
AC TEST CONDITIONS
IS61LV25616AL
AC TEST LOADS
Symbol
of 0V to 3.0V and output loading specified in Figure 1.
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing and Reference Level
Output Load
t
t
t
t
t
t
t
t
t
t
t
t
t
t
RC
AA
OHA
ACE
DOE
HZOE
LZOE
HZCE
LZCE
BA
HZB
LZB
PU
PD
(2)
(2)
(2)
(2)
(2)
(2
OUTPUT
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
Power Up Time
Power Down Time
3.3V
Including
jig and
scope
30 pF
319 Ω
353 Ω
Integrated Silicon Solution, Inc. — www.issi.com —
Min. Max.
10
—
—
—
—
—
—
2
0
0
3
0
0
0
-10
See Figures 1 and 2
10
10
10
—
—
—
—
—
—
(1)
0V to 3.0V
4
4
4
4
3
Figure 2
(Over Operating Range)
1.5V
Unit
3 ns
Min. Max.
12
—
—
—
—
—
—
2
0
0
3
0
0
0
-12
OUTPUT
12
12
12
—
—
—
—
—
—
5
5
6
5
4
3.3V
Including
jig and
scope
5 pF
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
319 Ω
353 Ω
ISSI
1-800-379-4774
02/14/06
Rev. E
®