IS61LV25616AL-10BI ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10BI Datasheet - Page 4
IS61LV25616AL-10BI
Manufacturer Part Number
IS61LV25616AL-10BI
Description
IC SRAM 4MBIT 10NS 48MBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV25616AL-10BLI.pdf
(17 pages)
Specifications of IS61LV25616AL-10BI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-MBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61LV25616AL-10BI
Manufacturer:
ISSI
Quantity:
180
Company:
Part Number:
IS61LV25616AL-10BI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Company:
Part Number:
IS61LV25616AL-10BI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
OPERATING RANGE
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
IS61LV25616AL
Symbol Parameter
V
T
P
Range
Commercial
Industrial
Symbol
V
V
V
V
I
I
STG
TERM
T
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
LI
LO
OH
IL
OL
IH
IL
(min.) = –2.0V for pulse width less than 10 ns.
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Ambient Temperature
–40°C to +85°C
0°C to +70°C
(1)
(1)
Test Conditions
V
V
GND ≤ V
GND ≤ V
Outputs Disabled
DD
DD
Integrated Silicon Solution, Inc. — www.issi.com —
= Min., I
= Min., I
(Over Operating Range)
3.3V +10%, -5%
3.3V +10%, -5%
OUT
IN
–0.5 to V
≤ V
–65 to +150
OH
≤ V
OL
DD
Value
10ns
= 8.0 mA
= –4.0 mA
1.0
DD
DD
+0.5
V
DD
Unit
°C
W
V
3.3V + 10%
3.3V + 10%
Com.
Com.
Ind.
Ind.
12ns
Min.
–0.3
2.4
2.0
—
–2
–5
–2
–5
V
DD
Max.
0.4
0.8
—
2
5
2
5
ISSI
+ 0.3
1-800-379-4774
Unit
02/14/06
µA
µA
Rev. E
V
V
V
V
®