IS61LV12816L-10LQLI ISSI, Integrated Silicon Solution Inc, IS61LV12816L-10LQLI Datasheet - Page 10

• Manufacturer Part Number: IS61LV12816L-10LQLI
• Description: IC SRAM 2MBIT 10NS 44LQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12816L-10LQLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 2M (128K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-LQFP
• Density: 2Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 3.3V
• Address Bus: 17b
• Package Type: LQFP
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 65mA
• Operating Supply Voltage (min): 3.135V
• Operating Supply Voltage (max): 3.6V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 44
• Word Size: 16b
• Number Of Words: 128K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV12816L
WRITE CYCLE NO. 2
10
WRITE CYCLE NO. 3
ADDRESS
ADDRESS
UB, LB
UB, LB
D
D
OUT
WE
D
OE
CE
OUT
WE
D
OE
CE
IN
IN
LOW
LOW
LOW
t
SA
t
DATA UNDEFINED
SA
DATA UNDEFINED
(1)
(WE Controlled: OE is LOW During Write Cycle)
(WE Controlled, OE = HIGH during Write Cycle)
Integrated Silicon Solution, Inc. — www.issi.com —
t
t
VALID ADDRESS
t
AW
HZWE
t
AW
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
t
WC
t
PBW
PBW
HIGH-Z
HIGH-Z
t
t
SD
DATA
SD
DATA
IN
IN
VALID
VALID
t
t
HD
t
HD
t
LZWE
LZWE
t
t
HA
HA
ISSI
UB_CEWR3.eps
1-800-379-4774
UB_CEWR2.eps
10/27/05
Rev. F
®