IS61C5128AL-10KLI ISSI, Integrated Silicon Solution Inc, IS61C5128AL-10KLI Datasheet - Page 13

• Manufacturer Part Number: IS61C5128AL-10KLI
• Description: IC SRAM 4MBIT 10NS 36SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C5128AL-10KLI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 4M (512K x 8)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 36-SOJ
• Density: 4Mb
• Access Time (max): 10ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: SOJ
• Operating Temp Range: -40C to 85C
• Number Of Ports: 1
• Supply Current: 50mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 36
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DATA RETENTION WAVEFORM (CE
IS61C5128AL/AS
DATA RETENTION SWITCHING CHARACTERISTICS (LOW POWER) (IS61/64C5128AS)
Note:
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
03/04/2008
Symbol
1. Typical Values are measured at V
V
I
t
t
DR
SDR
RDR
DR
4.5V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
VDD
V
CE
for Data Retention
DR
DD
= 5V, T
IS64C5128AL/AS
A
t
= 25
SDR
Test Condition
See Data Retention Waveform
V
V
See Data Retention Waveform
See Data Retention Waveform
o
DD
IN
C and not 100% tested.
≥ V
= 2.9V, CE ≥ V
CE
CE
CE
CE Controlled)
DD
– 0.2V, or V
DD
IN
– 0.2V
Data Retention Mode
CE ≥ VDD - 0.2V
≤ V
SS
+ 0.2V
typ.
Com.
Auto.
Ind.
(1)
t
RDR
Min.
2.9
t
—
—
—
RC
0
0.2
Max.
5.5
0.8
0.9
—
—
2
Unit
mA
ns
ns
V
13