IS61LV5128AL-10TI ISSI, Integrated Silicon Solution Inc, IS61LV5128AL-10TI Datasheet - Page 8
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IS61LV5128AL-10TI
Manufacturer Part Number
IS61LV5128AL-10TI
Description
IC SRAM 4MBIT 10NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61LV5128AL-10TLI.pdf
(13 pages)
Specifications of IS61LV5128AL-10TI
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (512K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LV5128AL-10TI
Manufacturer:
ISSI
Quantity:
20 000
WRITE CYCLE NO. 3
IS61LV5128AL
WRITE CYCLE NO. 2
8
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
2. I/O will assume the High-Z state if OE > V
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
OUT
WE
WE
D
D
OE
OE
CE
CE
IN
IN
LOW
LOW
LOW
t
SA
(1,2)
(WE Controlled: OE is LOW During Write Cycle)
t
DATA UNDEFINED
DATA UNDEFINED
SA
(WE Controlled: OE is HIGH During Write Cycle)
IH
.
Integrated Silicon Solution, Inc. — www.issi.com —
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
CE_WR2.eps
ISSI
CE_WR3.eps
1-800-379-4774
04/15/05
Rev. C
®