IS61LV25616AL-10KLI ISSI, Integrated Silicon Solution Inc, IS61LV25616AL-10KLI Datasheet - Page 7

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IS61LV25616AL-10KLI

Manufacturer Part Number
IS61LV25616AL-10KLI
Description
IC SRAM 4MBIT 10NS 44SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV25616AL-10KLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
4M (256K x 16)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-SOJ
Density
4Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
18b
Package Type
SOJ
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
110mA
Operating Supply Voltage (min)
3.135V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS61LV25616AL
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
02/14/06
READ CYCLE NO. 2
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = V
3. Address is valid prior to or coincident with CE LOW transition.
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
ADDRESS
LB, UB
Current
Supply
D
D
V
OUT
OUT
OE
CE
DD
(1,2)
(1,3)
HIGH-Z
t
(Address Controlled) (CE = OE = V
LZCE
PREVIOUS DATA VALID
t
LZB
t
PU
t
AA
50%
t
DOE
t
t
LZOE
t
ACE
BA
t
OHA
IL
1-800-379-4774
.
t
RC
t
IL
t
RC
AA
, UB or LB = V
t
DATA VALID
RC
t
HZCE
IL
)
t
DATA VALID
PD
t
t
t
t
OHA
HZB
HZOE
OHA
50%
UB_CEDR2.eps
READ1.eps
I
I
ISSI
CC
SB
®
7
1
2
3
4
5
6
7
8
9
10
11
12

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