IS61LV2568L-10KLI ISSI, Integrated Silicon Solution Inc, IS61LV2568L-10KLI Datasheet - Page 10

no-image

IS61LV2568L-10KLI

Manufacturer Part Number
IS61LV2568L-10KLI
Description
IC SRAM 2MBIT 10NS 36SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LV2568L-10KLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
2M (256K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
36-SOJ
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS61LV2568L
AC WAVEFORMS
WRITE CYCLE NO. 2
Note:
1. The internal Write time is defined by the overlap of CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any
WRITE CYCLE NO. 3
Note:
1. The internal Write time is defined by the overlap of CE = LOW and WE = LOW. All signals must be in valid states to initiate a Write, but any
10
ADDRESS
can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.
can be deasserted to terminate the Write. The Data Input Setup and Hold timing is referenced to the rising or falling edge of the signal that
terminates the Write.
ADDRESS
D
D
OUT
WE
OUT
D
OE
WE
CE
D
OE
CE
IN
IN
LOW
LOW
LOW
t
SA
t
DATA UNDEFINED
DATA UNDEFINED
SA
(1)
(WE Controlled: OE is LOW During Write Cycle)
(WE Controlled, OE = HIGH during Write Cycle)
Integrated Silicon Solution, Inc. — www.issi.com —
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
t
HD
t
LZWE
LZWE
t
t
HA
HA
1-800-379-4774
CE_WR2.eps
CE_WR3.eps
04/28/08
Rev. D

Related parts for IS61LV2568L-10KLI