BCV49 /T3 NXP Semiconductors, BCV49 /T3 Datasheet - Page 3

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BCV49 /T3

Manufacturer Part Number
BCV49 /T3
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV49 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Maximum Dc Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
2000 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCV49,135
NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2004 Dec 06
V
V
V
I
I
I
P
T
T
T
R
R
SYMBOL
C
CM
BM
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCV29
BCV49
BCV29
BCV49
PARAMETER
PARAMETER
3
open emitter
V
open collector
T
amb
BE
CONDITIONS
note 1
= 0 V
≤ 25 °C; note 1 −
CONDITIONS
−65
−65
MIN.
VALUE
BCV29; BCV49
96
16
40
80
30
60
10
500
1
200
1.3
+150
150
+150
MAX.
Product data sheet
UNIT
V
V
V
V
V
mA
A
mA
W
°C
°C
°C
K/W
K/W
2
2
UNIT
.
.

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