EMH15T2R ROHM Semiconductor, EMH15T2R Datasheet - Page 2

• Manufacturer Part Number: EMH15T2R
• Description: Transistors Switching - Resistor Biased TRANS DIGI BJT NPN 50V 100MA 6PIN
• Manufacturer: ROHM Semiconductor

Specifications of EMH15T2R

• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 47 KOhms
• Mounting Style: SMD/SMT
• Package / Case: EMT-6
• Dc Collector/base Gain Hfe Min: 100
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C

EMH15 / IMH15A
lAbsolute maximum ratings (Ta = 25°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Input resistance
Transition frequency
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<For Tr1 and Tr2 in common>
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
Parameter
Parameter
EMH15
IMH15A
Symbol
V
BV
BV
BV
I
I
f
CE(sat)
h
CBO
EBO
R
T
FE
CBO
CEO
EBO
1
*1
I
I
I
V
V
I
V
V
f = 100MHz
C
C
E
C
CB
EB
CE
CE
= 50mA
= 50mA
= 1mA
/ I
2/5
= 5V , I
= 50V
= 4V
= 10V, I
B
= 5mA / 0.5mA
Conditions
I
Symbol
C
-
C(MAX.)
E
V
V
V
= 1mA
P
T
= -5mA,
CBO
CEO
EBO
T
D
stg
j
*2
*1
Min.
32.9
100
50
50
5
-
-
-
-
150 (Total)
300 (Total)
-55 to +150
Values
Typ.
100
150
250
250
50
50
47
5
-
-
-
-
-
-
*3
*4
Max.
61.1
2012.06 - Rev.C
600
0.5
0.5
0.3
-
-
-
-
Data Sheet
MHz
Unit
mW
mW
Unit
mA
mA
mA
kW
°C
°C
V
V
V
V
V
V
V
-