IS62WV51216BLL-55TLI-TR ISSI, Integrated Silicon Solution Inc, IS62WV51216BLL-55TLI-TR Datasheet - Page 4

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IS62WV51216BLL-55TLI-TR

Manufacturer Part Number
IS62WV51216BLL-55TLI-TR
Description
IC SRAM 8MBIT 55NS 44TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS62WV51216BLL-55TLI-TR

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.5 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Density
8Mb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
SDR
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
19b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
5mA
Operating Supply Voltage (min)
2.5V
Operating Supply Voltage (max)
3.6V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
44
Word Size
16b
Number Of Words
512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS62WV51216BLL-55TLI-TR
Manufacturer:
ISSI
Quantity:
20 000
Part Number:
IS62WV51216BLL-55TLI-TR
Quantity:
197
Part Number:
IS62WV51216BLL-55TLI-TR
0
IS62WV51216ALL,
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
DC ELECTRICAL CHARACTERISTICS
Notes:
1. V
4
Symbol
V
T
V
T
P
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Symbol
V
V
V
V
I
I
LO
LI
STG
IL
TERM
BIAS
DD
T
OH
OL
IH
IL (1)
(min.) = –1.0V for pulse width less than 10 ns.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
Storage Temperature
Power Dissipation
DD
Related to GND
IS62WV51216BLL
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
OH
OH
OL
OL
(1)
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
Integrated Silicon Solution, Inc. — www.issi.com —
(Over Operating Range)
OUT
IN
≤ V
≤ V
DD
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
–0.2 to V
V
–0.2 to +3.8
–65 to +150
DD
–40 to +85
Value
1.0
DD
+0.3
Min.
–0.2
–0.2
1.4
2.2
1.4
2.2
–1
–1
Unit
V
V
°C
°C
W
V
V
DD
DD
Max.
0.2
0.4
0.4
0.6
1
1
+ 0.2
+ 0.3
1-800-379-4774
12/13/2007
Unit
µA
µA
Rev. D
V
V
V
V
V
V
V
V

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