IS42S16160B-7T-TR ISSI, Integrated Silicon Solution Inc, IS42S16160B-7T-TR Datasheet - Page 44

• Manufacturer Part Number: IS42S16160B-7T-TR
• Description: IC SDRAM 256MBIT 143MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16160B-7T-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S83200B,
ALTERNATING BANK WRITE ACCESSES
Notes:
1) Burst Length = 4
2) x16: A9, A11, and A12 = "Don't Care"
44
A0-A9, A11, A12
x8: A11 and A12 = "Don't Care"
DQM/DQML
COMMAND
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
CMH
AH
AH
AH
t
t
t
t
RCD
RRD
RAS
RC
IS42S16160B
t
CK
- BANK 0
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
BANK 0
DS
WRITE
D
T2
IN
t
t
CMH
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
Integrated Silicon Solution, Inc. — www.issi.com
T5
IN
NOP
m+
t
DH
t
DPL
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
D
T6
IN
t
DH
b
(2)
t
DS
D
t
RP
T7
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
DPL
3
- BANK 0
- BANK 1
07/28/08
Rev. D