IS41LV16105B-50K ISSI, Integrated Silicon Solution Inc, IS41LV16105B-50K Datasheet - Page 3

• Manufacturer Part Number: IS41LV16105B-50K
• Description: IC DRAM 16MBIT 50NS 42SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS41LV16105B-50K

• Format - Memory: RAM
• Memory Type: DRAM - FP
• Memory Size: 16M (1M x 16)
• Speed: 50ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 42-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS41LV16105B
TRUTH TABLE
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two CAS signals must be active (LCAS or UCAS).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
Function
Standby
Read: Word
Read: Lower Byte
Read: Upper Byte
Write: Word (Early Write)
Write: Lower Byte (Early Write)
Write: Upper Byte (Early Write)
Read-Write
Hidden Refresh
RAS-Only Refresh
CBR Refresh
(1,2)
(4)
Write
Read
(1,3)
(2)
L H L
L H L
H L
RAS
RAS
RAS
RAS
RAS
H
L
L
L
L
L
L
L
L
LCAS
LCAS
LCAS
LCAS
LCAS
H
H
H
H
L
L
L
L
L
L
L
L
UCAS
UCAS
UCAS
UCAS
UCAS
H
H
H
H
L
L
L
L
L
L
L
L
H L
WE
WE
WE
WE
WE
H
X
H
H
H
X
X
L
L
L
L
L H
OE
OE
OE
OE
OE
X
X
X
X
X
X
X
L
L
L
L
Address t
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/COL
ROW/NA
X
X
R
/t
C
I/O
High-Z
D
Lower Byte, D
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
D
Lower Byte, D
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, D
D
D
D
High-Z
High-Z
OUT
OUT
IN
OUT
OUT
ISSI
, D
IN
IN
IN
OUT
OUT
®
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