IS61NLP25618A-200TQI-TR ISSI, Integrated Silicon Solution Inc, IS61NLP25618A-200TQI-TR Datasheet - Page 12
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IS61NLP25618A-200TQI-TR
Manufacturer Part Number
IS61NLP25618A-200TQI-TR
Description
IC SRAM 4MBIT 200MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS61NLP12836B-200TQLI.pdf
(29 pages)
Specifications of IS61NLP25618A-200TQI-TR
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (256K x 18)
Speed
200MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IS61NLP25618A-200TQI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
WRITE TRUTH TABLE
Notes
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE
12
External Address
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c
WRITE BYTE d
WRITE ALL BYTEs
WRITE ABORT/NOP
:
A1 A0
00
01
10
11
1st Burst Address
(x32/x36)
A1 A0
WE
H
L
L
L
L
L
L
01
00
11
10
BWa
X
H
H
H
H
L
L
2nd Burst Address
BWb
(MODE = V
H
H
H
H
X
L
L
A1 A0
10
11
00
01
BWc
dd
X
H
H
H
H
L
L
Integrated Silicon Solution, Inc. — www.issi.com
or NC)
BWd
3rd Burst Address
X
H
H
H
H
L
L
A1 A0
11
10
01
00
09/10/07
Rev. D