IS42S16160D-6TL ISSI, Integrated Silicon Solution Inc, IS42S16160D-6TL Datasheet - Page 18

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IS42S16160D-6TL

Manufacturer Part Number
IS42S16160D-6TL
Description
IC SDRAM 256MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheets

Specifications of IS42S16160D-6TL

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
16Mx16
Density
256Mb
Address Bus
15b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
166MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
180mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S16160D-6TL
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS42S16160D-6TL
Manufacturer:
ISSI
Quantity:
8 000
Part Number:
IS42S16160D-6TL
Manufacturer:
ISSI
Quantity:
20 000
IS42S83200D, IS42S16160D
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
18
SYMBOL PARAMETER
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
cac
rcd
rac
rc
ras
rp
rrd
ccd
dpl
dal
rbd
wbd
rql
wdl
pql
qmd
dmd
mrd
Clock Cycle Time
Operating Frequency (CAS Latency = 3)
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time5
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time0
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time 0
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
rcd
+ t
cac
)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
Integrated Silicon Solution, Inc. — www.issi.com
166
10
-2
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
10
–2
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
133
7.5
10
-2
-1
2
2
4
5
2
2
1
2
4
3
2
0
3
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
Rev. 00D
12/12/07

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