IS61LV12824-10TQ ISSI, Integrated Silicon Solution Inc, IS61LV12824-10TQ Datasheet - Page 7

• Manufacturer Part Number: IS61LV12824-10TQ
• Description: IC SRAM 3MBIT 10NS 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV12824-10TQ

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 3M (128K x 24)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV12824
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
READ CYCLE NO. 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. D
06/22/05
ADDRESS
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE1, CE2 = V
3. Address is valid prior to or coincident with CE1, CE2 LOW and CE2 HIGH transition.
D
D
OUT
CS1
CS2
OUT
OE
t
t
LZCS1
LZCS2
PREVIOUS DATA VALID
(1,2)
(1,3)
HIGH-Z
(Address Controlled) (CE1 = CE2 = OE = V
t
AA
t
DOE
t
t
t
ACS1
ACS2
LZOE
t
OHA
IL
t
. CE2 = V
RC
t
AA
IH
t
.
RC
DATA VALID
IL
; CE2 = V
IH
)
DATA VALID
t
OHA
t
t
t
t
OHA
HZOE
HZCS1
HZCS2
ISSI
CS2_RD2.eps
READ1.eps
®
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