IS42S83200D-6TLI ISSI, Integrated Silicon Solution Inc, IS42S83200D-6TLI Datasheet - Page 16

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IS42S83200D-6TLI

Manufacturer Part Number
IS42S83200D-6TLI
Description
IC SDRAM 256MBIT 166MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS42S83200D-6TLI

Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (32M x 8)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
54-TSOP II
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS42S83200D-6TLI
Manufacturer:
ISSI
Quantity:
2 148
IS42S83200D, IS42S16160D
IS45S83200D, IS45S16160D
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
DC RECOMMENDED OPERATING CONDITIONS
(T
Symbol
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
16
a
Symbol
V
V
V
V
P
I
T
T
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Symbol
C
C
CI/O
= 0
cs
opr
ih
il
out
stg
dd max
ddq max
in
d max
in1
in2
V
V
V
(undershoot): V
(overshoot): V
o
V
C to +70
ddq
ih
il
dd
(2)
(1)
o
C for Commercial grade. T
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance: DQS
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
ih
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
ih
(max) = V
(min) = -1.2V (
ddq
+1.2V (
pulse width
a
pulse width
= -40
(1)
o
< 3ns).
C to +85
(At T
< 3ns).
a
= 0 to +25°C, V
o
C for Industrial and A1 grade. T
Com.
Ind.
A1
A2
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Integrated Silicon Solution, Inc. — www.issi.com
dd
Typ.
–0.5 to +4.6
–0.5 to +4.6
–40 to +105
–65 to +150
3.3
3.3
–40 to +85
–40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
= 3.3 ± 0.3V)
+ 0.5
V
ddq
a
Max.
+0.8
= -40
Max.
3.6
3.6
3.5
3.8
6.0
+ 0.3
o
Unit
C to +105
mA
°C
°C
W
V
V
V
V
o
C for A2 grade.)
Unit
Unit
pF
pF
pF
V
V
V
V
04/05/2010
Rev. D

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