IS61NLF25618A-7.5TQLI ISSI, Integrated Silicon Solution Inc, IS61NLF25618A-7.5TQLI Datasheet

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IS61NLF25618A-7.5TQLI

Manufacturer Part Number
IS61NLF25618A-7.5TQLI
Description
IC SRAM 4MBIT 117MHZ 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLF25618A-7.5TQLI

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
4M (256K x 18)
Speed
117MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Density
4Mb
Access Time (max)
7.5ns
Sync/async
Synchronous
Architecture
SDR
Clock Freq (max)
117MHz
Operating Supply Voltage (typ)
3.3V
Address Bus
18b
Package Type
TQFP
Operating Temp Range
-40C to 85C
Number Of Ports
2
Supply Current
160mA
Operating Supply Voltage (min)
3.25V
Operating Supply Voltage (max)
3.465V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
100
Word Size
18b
Number Of Words
256K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61NLF25618A-7.5TQLI
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
Part Number:
IS61NLF25618A-7.5TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61NLF12836A/IS61NVF12836A
IS61NLF25618A/IS61NVF25618A
128K x 36 and 256K x 18
4Mb, FLOW THROUGH 'NO WAIT'
STATE BUS SRAM
FEATURES
• 100 percent bus utilization
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
• Interleaved or linear burst sequence control using
• Three chip enables for simple depth expansion
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119-ball PBGA, and 165-
• Power supply:
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
05/28/08
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
data and control
MODE input
and address pipelining
ball PBGA packages
NVF: V
NLF: V
Symbol
t
t
KQ
KC
DD
DD
3.3V (± 5%), V
2.5V (± 5%), V
Parameter
Clock Access Time
Cycle Time
Frequency
DDQ
DDQ
3.3V/2.5V (± 5%)
2.5V (± 5%)
133
6.5
6.5
7.5
DESCRIPTION
The 4 Meg 'NLF/NVF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 128K words by 36 bits and 256K words by 18
bits, fabricated with
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
A burst mode pin (MODE) defines the order of the burst
117
7.5
7.5
8.5
ISSI
Units
MHz
ns
ns
's advanced CMOS technology.
MAY 2008
1

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IS61NLF25618A-7.5TQLI Summary of contents

Page 1

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 128K x 36 and 256K x 18 4Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM FEATURES • 100 percent bus utilization • No wait cycles between Read and Write • Internal self-timed write cycle • Individual Byte Write Control • Single Read/Write control pin • ...

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... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A BLOCK DIAGRAM ADDRESS x 36: A [0:16] or REGISTER x 18: A [0:17] CLK CONTROL LOGIC K CKE CE CE2 CE2 CONTROL } ADV REGISTER WE BWŸ X (X= a- DQx/DQPx 2 A2-A16 or A2-A17 MODE BURST ADDRESS A0-A1 A'0-A'1 COUNTER WRITE WRITE ADDRESS ADDRESS REGISTER REGISTER CONTROL LOGIC Integrated Silicon Solution, Inc. — ...

Page 3

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A Bottom View 119-Ball BGA Integrated Silicon Solution, Inc. — www.issi.com Rev. C 05/28/08 Bottom View 165-Ball 15mm BGA 3 ...

Page 4

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A PIN CONFIGURATION — 128K CE2 C DQPc NC V DDQ D DQc DQc V DDQ E DQc DQc V DDQ F DQc DQc V DDQ G DQc DQc V DDQ DQd DQd V DDQ K DQd DQd V DDQ L DQd DQd V DDQ M DQd DQd V DDQ N DQPd NC V DDQ MODE NC A Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. ...

Page 5

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 119-PIN PBGA PACKAGE CONFIGURATION DDQ B NC CE2 C NC DQc DQPc D DQc DQc E V DQc F DDQ DQc DQc G H DQc DQc DDQ K DQd DQd L DQd DQd V DQd M DDQ DQd DQd N DQd DQPd DDQ Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. ...

Page 6

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 165-PIN PBGA PACKAGE CONFIGURATION CE2 DDQ DQb DDQ V DQb E NC DDQ V DDQ F NC DQb V DDQ G NC DQb DDQ DQb DQb DDQ DQb DDQ V M DQb NC DDQ NC N DQPb V DDQ MODE Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. ...

Page 7

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 119-PIN PBGA PACKAGE CONFIGURATION DDQ B NC CE2 NC C DQb D DQb DDQ NC DQb G H DQb DDQ K DQb NC L DQb V DQb M DDQ DQb N NC DQPb DDQ Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired. ...

Page 8

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A PIN CONFIGURATION 100-Pin TQFP 100 DQPc 1 2 DQc 3 DQc 4 V DDQ 5 Vss 6 DQc 7 DQc 8 DQc 9 DQc 10 Vss 11 V DDQ 12 DQc 13 DQc Vss 18 DQd 19 DQd 20 V DDQ 21 Vss 22 DQd 23 DQd 24 DQd 25 DQd Vss DDQ 28 DQd DQd 29 DQPd 128K x 36 PIN DESCRIPTIONS A0, A1 Synchronous Address Inputs ...

Page 9

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A STATE DIAGRAM BEGIN READ READ READ BURST BURST BURST READ SYNCHRONOUS TRUTH TABLE Address Operation Used Not Selected N/A Not Selected N/A Not Selected N/A Not Selected Continue N/A Begin Burst Read External Address Continue Burst Read Next Address ...

Page 10

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A ASYNCHRONOUS TRUTH TABLE Operation ZZ Sleep Mode H L Read L Write L Deselected L Notes means "Don't Care". 2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus contention will occur. 3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time. ...

Page 11

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A WRITE TRUTH TABLE (x36 Operation READ H WRITE BYTE a L WRITE BYTE b L WRITE BYTE c L WRITE BYTE d L WRITE ALL BYTEs L WRITE ABORT/NOP L Notes : 1. X means "Don't Care". 2. All inputs in this table must beet setup and hold time around the rising edge of CLK. ...

Page 12

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A LINEAR BURST ADDRESS TABLE A1', A0' = 1,1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter T Storage Temperature STG P Power Dissipation D I Output Current (per I/O) OUT Voltage Relative OUT V Voltage Relative for Address and Control Inputs Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 13

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A OPERATING RANGE (IS61NVFx) Range Ambient Temperature Commercial 0°C to +70°C Industrial -40°C to +85°C DC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions V Output HIGH Voltage Output LOW Voltage Input HIGH Voltage IH V Input LOW Voltage IL I Input Leakage Current Output Leakage Current ...

Page 14

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A CAPACITANCE (1,2) Symbol Parameter C Input Capacitance IN C Input/Output Capacitance OUT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz 3.3V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times ...

Page 15

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A 2.5V I/O AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT Z = 50Ω O OUTPUT Figure 3 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

Page 16

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A READ/WRITE CYCLE SWITCHING CHARACTERISTICS Symbol Parameter fmax Clock Frequency t Cycle Time KC t Clock High Time KH t Clock Low Time KL t Clock Access Time KQ (2) t Clock High to Output Invalid KQX (2,3) t Clock High to Output Low-Z KQLZ (2,3) t Clock High to Output High-Z ...

Page 17

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A SLEEP MODE ELECTRICAL CHARACTERISTICS Symbol Parameter I Current during SLEEP MODE active to input ignored PDS t ZZ inactive to input sampled PUS t ZZ active to SLEEP current ZZI t ZZ inactive to exit SLEEP current RZZI SLEEP MODE TIMING CLK t PDS ZZ setup cycle ZZ t ZZI ...

Page 18

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A READ CYCLE TIMING CLK t t ADVS ADVH ADV Address WRITE t SE CKE t t CES CEH OEQ OEHZ t OEHZ Data Out Q1-1 NOTES: WRITE = L means and BWx = and BWX = means CE1 = L, CE2 = H and CE2 = means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L ...

Page 19

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A WRITE CYCLE TIMING t KH CLK t KC ADV Address A1 A2 WRITE CKE CE OE Data In D1-1 t OEHZ Data Out Q0-4 NOTES: WRITE = L means and BWx = and BWX = means CE1 = L, CE2 = H and CE2 = means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L Integrated Silicon Solution, Inc. — ...

Page 20

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A SINGLE READ/WRITE CYCLE TIMING CLK CKE Address WRITE CE ADV OE t OEQ t OELZ Data Out Data In D2 NOTES: WRITE = L means and BWx = means CE1 = L, CE2 = H and CE2 = means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = Integrated Silicon Solution, Inc. — www.issi.com ...

Page 21

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A CKE CKE CKE CKE CKE OPERATION TIMING CLK CKE Address A1 A2 WRITE CE ADV KQLZ Data Out Q1 Data In NOTES: WRITE = L means and BWx = means CE1 = L, CE2 = H and CE2 = means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L Integrated Silicon Solution, Inc. — www.issi.com Rev ...

Page 22

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A OPERATION TIMING CLK CKE A1 A2 Address WRITE CE ADV OEQ t OELZ Q1 Q2 Data Out Data In NOTES: WRITE = L means and BWx = means CE1 = L, CE2 = H and CE2 = means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = KQHZ KQ t KQLZ Integrated Silicon Solution, Inc. — www.issi.com ...

Page 23

... Order Part Number 128Kx36 IS61NLF12836A-6.5TQI IS61NLF12836A-6.5B2I IS61NLF12836A-6.5B3I IS61NLF12836A-7.5TQI IS61NLF12836A-7.5TQLI IS61NLF12836A-7.5B2I IS61NLF12836A-7.5B3I IS61NLF12836A-7.5B3LI 256Kx18 IS61NLF25618A-6.5TQI IS61NLF25618A-6.5B2I IS61NLF25618A-6.5B3I IS61NLF25618A-7.5TQI IS61NLF25618A-7.5TQLI IS61NLF25618A-7.5B2I IS61NLF25618A-7.5B3I Package 100 TQFP 119 PBGA 165 PBGA 100 TQFP 119 PBGA 165 PBGA 100 TQFP 119 PBGA 165 PBGA 100 TQFP 119 PBGA ...

Page 24

... IS61NLF12836A/IS61NVF12836A IS61NLF25618A/IS61NVF25618A ORDERING INFORMATION (V Commercial Range: 0°C to +70°C Access Time 6.5 7.5 6.5 7.5 Industrial Range: -40°C to +85°C Access Time 6.5 7.5 6.5 7 2.5V/V = 2.5V) DD DDQ Order Part Number 128Kx36 IS61NVF12836A-6.5TQ IS61NVF12836A-6.5B2 IS61NVF12836A-6.5B3 IS61NVF12836A-7.5TQ IS61NVF12836A-7.5B2 IS61NVF12836A-7.5B3 256Kx18 IS61NVF25618A-6.5TQ IS61NVF25618A-6.5B2 IS61NVF25618A-6 ...

Page 25

PACKAGING INFORMATION Plastic Ball Grid Array Package Code: B (119-pin MILLIMETERS Sym. Min. Max. N0. Leads 119 A — 2.41 A1 0.50 0.70 A2 0.80 1.00 A3 1.30 1.70 A4 0.56 BSC b 0.60 0.90 D 21.80 ...

Page 26

PACKAGING INFORMATION Ball Grid Array Package Code: B (165-pin) TOP VIEW A1 CORNER BGA - 13mm ...

Page 27

PACKAGING INFORMATION TQFP (Thin Quad Flat Pack Package) Package Code Thin Quad Flat Pack (TQ) Millimeters Inches Symbol Min Max Min Ref. Std. No. Leads (N) 100 A — 1.60 — A1 0.05 0.15 ...

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