IS61NLP12836B-200B2LI ISSI, Integrated Silicon Solution Inc, IS61NLP12836B-200B2LI Datasheet - Page 14

• Manufacturer Part Number: IS61NLP12836B-200B2LI
• Description: IC SRAM 4MBIT 200MHZ 119BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61NLP12836B-200B2LI

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 4M (128K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 119-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61NLP12832B
IS61NLP12836B/IS61NVP12836B
IS61NLP25618A/IS61NVP25618A
DC ELECTRICAL CHARACTERISTICS
Note:
1. Overshoot: V
POWER SUPPLY CHARACTERISTICS
Note:
1. MODE pin has an internal pullup and should be tied to V
2. Typical values are measured at V
14
Symbol Parameter
I
I
I
I
cc
Sb
SbI
Sb
Symbol
V
V
V
V
I
I
lI
lo
V
oh
ol
Ih
Il
2
SS
(1)
(1)
+ 0.2V or ≥ V
AC Operating
Supply Current
Standby Current
TTL Input
Standby Current
cMoS Input
Sleep Mode
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage Current
Output Leakage Current
Ih
(AC) < V
dd
– 0.2V.
dd
+ 2.0V (Pulse width less than t
Test Conditions
Device Selected,
OE = V
Cycle Time ≥ t
Device Deselected,
V
All Inputs ≤ V
ZZ ≤ V
Device Deselected,
V
V
ZZ>V
All Inputs ≤ 0.2V or ≥ V
f = 0
dd
dd
In
≤ V
= Max.,
= Max.,
dd
Ih
Il
Ih
SS
, f = Max.
= 3.3V, T
Test Conditions
I
I
I
I
V
V
, ZZ ≤ V
oh
oh
ol
ol
SS
SS
+ 0.2V or ≥V
= 8.0 mA (3.3V)
= 1.0 mA (2.5V)
= –4.0 mA (3.3V)
= –1.0 mA (2.5V)
≤ V
≤ V
Il
kc
or ≥ V
In
ouT
Il
min.
A
,
≤ V
(Over Operating Range)
= 25
≤ V
Ih
dd
,
dd
ddq
(1)
dd
(1)
o
– 0.2V
C and not 100% tested.
, OE = V
– 0.2V,
(Over Operating Range)
dd
kc
Temp. range
/2). Undershoot: V
or V
Ih
Com.
Com.
Com.
typ.
Com.
typ.
Ind.
Ind.
Ind.
Ind.
SS
(2)
(2)
. It exhibits ±100µA maximum leakage current when tied to ≤
Min.
–0.3
Integrated Silicon Solution, Inc. — www.issi.com
2.4
2.0
—
–5
–5
225
250
100
3.3V
x18
90
70
75
30
35
Il
(AC) > -2V (Pulse width less than t
-250
V
MAX
dd
40
20
Max.
0.4
0.8
x32/x36
—
5
5
+ 0.3
225
250
100
90
70
75
30
35
Min.
–0.3
2.0
1.7
–5
–5
—
2.5V
200
210
100
x18 x32/x36
90
70
75
30
35
-200
V
MAX
dd
Max.
0.4
0.7
—
5
5
+ 0.3
200
210
100
90
70
75
30
35
kc
/2).
09/10/07
Unit
µA
µA
Rev. D
Unit
mA
mA
mA
mA
V
V
V
V