IS42S16160D-6BI ISSI, Integrated Silicon Solution Inc, IS42S16160D-6BI Datasheet - Page 26

• Manufacturer Part Number: IS42S16160D-6BI
• Description: IC SDRAM 256MBIT 166MHZ 54BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S16160D-6BI

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-BGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

CAS LATENCY
three clocks.
the latency is m clocks, the data will be available by clock
edge n + m. The DQs will start driving as a result of the
clock edge one cycle earlier (n + m - 1), and provided that
the relevant access times are met, the data will be valid by
clock edge n + m. For example, assuming that the clock
cycle time is such that all relevant access times are met,
if a READ command is registered at T0 and the latency
is programmed to two clocks, the DQs will start driving
after T1 and the data will be valid by T2, as shown in CAS
Latency diagrams. The Allowable Operating Frequency
table indicates the operating frequencies at which each
CAS latency setting can be used.
Reserved states should not be used as unknown operation
or incompatibility with future versions may result.
IS42S83200D, IS42S16160D
CAS Latency
The CAS latency is the delay, in clock cycles, between
the registration of a READ command and the availability of
the first piece of output data. The latency can be set to two or
If a READ command is registered at clock edge n, and
26
COMMAND
COMMAND
CLK
CLK
DQ
DQ
READ
READ
T0
T0
CAS Latency - 2
NOP
NOP
CAS Latency - 3
T1
T1
t
LZ
t
AC
CAS Latency
applies to both READ and WRITE bursts; when M9 = 1,
write accesses are single-location (nonburst) accesses.
Operating Mode
The normal operating mode is selected by setting M7 and M8
to zero; the other combinations of values for M7 and M8 are
reserved for future use and/or test modes. The programmed
burst length applies to both READ and WRITE bursts.
Test modes and reserved states should not be used be-
cause unknown operation or incompatibility with future
versions may result.
Write Burst Mode
When M9 = 0, the burst length programmed via M0-M2
the programmed burst length applies to READ bursts, but
Speed
-75E
NOP
NOP
Allowable Operating Frequency (MHz)
-6
-7
T2
T2
Integrated Silicon Solution, Inc. — www.issi.com
D
OUT
t
t
OH
LZ
t
AC
NOP
T3
T3
CAS Latency = 2
D
DON'T CARE
UNDEFINED
OUT
t
OH
125
100
133
T4
CAS Latency = 3
166
143
—
Rev. 00D
12/12/07