IS42S32800B-7TI ISSI, Integrated Silicon Solution Inc, IS42S32800B-7TI Datasheet - Page 46
IS42S32800B-7TI
Manufacturer Part Number
IS42S32800B-7TI
Description
IC SDRAM 256MBIT 143MHZ 86TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS42S32800B-7BL.pdf
(62 pages)
Specifications of IS42S32800B-7TI
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
256M (8Mx32)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
86-TSOPII
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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IS42S32800B
46
Figure 15.3.Interleaved Column Write Cycle (Burst Length=4,CAS#Latency=3)
BS0,1
A 0-A9
RAS#
CAS#
DQM
CKE
CS#
WE#
CLK
A10
DQ
Hi-Z
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
Command
Activate
Bank A
RAx
RAx
t
CK3
t
RRD
t
RCD
> t
RRD(min)
Command
Bank A
Write
DAx0 DAx1 DAx2 DAx3
CAx RBw
Command
Activate
Bank B
RBw
Command
Bank B
DBw0 DBw1 DBx0 DBx1
CBw
Write
Command
Bank B
Write
CBx
Command
Bank B
Write
DBy0
CBy
DBy1 DAy0
Command
Bank A
Write
CAy
DAy1
Command
Bank B
t
DBz0 DBz1 DBz2 DBz3
Write
CBz
WR
Precharge
Integrated Silicon Solution, Inc.
Command
Bank A
t
RP
t
WR(min)
Precharge
Command
Bank B
07/21/09
Rev. F
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