IS42S32800D-6B-TR ISSI, Integrated Silicon Solution Inc, IS42S32800D-6B-TR Datasheet - Page 51

• Manufacturer Part Number: IS42S32800D-6B-TR
• Description: IC SDRAM 256MBIT 166MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32800D-6B-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-BGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 13b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S32800D
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00B
11/21/07
Figure 18.2.Full Page Read Cycle (Burst Length=Full Page,CAS#Latency=2)
BS0,1
CAS#
A0-A9
DQM
RAS#
WE#
CKE
CS#
CLK
A10
DQ
Hi-Z
High
Command
Activate
Bank A
RAx
RAx
T0 T 1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T 11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
t
Command
Bank A
CK2
Read
CAx
Command
Activate
Bank B
RBx
RBx
Ax
Ax+1 Ax+2 Ax-2 Ax- 1
The burst counter wraps
from the highest order
page address back to zero
during this time interval
Command
Bank B
Read
CBx
Ax
Ax+1 Bx
Full Page burst operation does not
term in ate when the burst length is sat is fied;
the burst counter increments and continues
bursting beginning with the starting address.
Bx+1
B
x+2
Bx+3 Bx+4
Burst Stop
Command
Bx+5
Precharge
Command
Bank B
Bx+6
t
RP
Command
Activate
Bank B
RBy
RBy
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