IS61LF25636A-7.5TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61LF25636A-7.5TQLI-TR Datasheet

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IS61LF25636A-7.5TQLI-TR

Manufacturer Part Number
IS61LF25636A-7.5TQLI-TR
Description
IC SRAM 9MBIT 7.5NS 100TQFP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LF25636A-7.5TQLI-TR

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LF25636A-7.5TQLI-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
IS61LF25636A    IS61VF25636A    IS64LF25636A
IS61LF51218A    IS61VF51218A 
256K x 36, 512K x 18 
9 Mb SYNCHRONOUS FLOW-THROUGH 
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
LF: V
• JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-
• Lead-free available
• Automotive temperature available
FAST ACCESS TIME
Integrated Silicon Solution, Inc.
Rev.  H
07/22/2010
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
control
sion and address pipelining
VF: V
pin PBGA packages
Symbol 
t
t
kq
kc
dd
dd
3.3V + 5%, V
2.5V + 5%, V
Parameter 
Clock Access Time
Cycle Time
Frequency
ddq
ddq
3.3V/2.5V + 5%
2.5V + 5%
DESCRIPTION
The
VF51218A are high-speed, low-power synchronous
static RAMs designed to provide burstable, high-performance
memory for communication and networking applications.
The IS61LF/VF25636A and IS64LF25636A are organized
as 262,144 words by 36 bits. The IS61LF/VF51218A is
organized as 524,288 words by 18 bits. Fabricated with
ISSI
a 2-bit burst counter, high-speed SRAM core, and high-
drive capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write en-
able (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW)
is available for writing all bytes at one time, regardless of
the byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be gener-
ated internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW. Inter-
leave burst is achieved when this pin is tied HIGH or left
floating.
-6.5 
133
6.5
7.5
's advanced CMOS technology, the device integrates
ISSI
IS61LF/VF25636A, IS64LF25636A and IS61LF/
-7.5 
117
7.5
8.5
SEPTEMBER 2010
Units
MHz
ns
ns
1

Related parts for IS61LF25636A-7.5TQLI-TR

IS61LF25636A-7.5TQLI-TR Summary of contents

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... IS61LF25636A    IS61VF25636A    IS64LF25636A IS61LF51218A    IS61VF51218A  256K x 36, 512K x 18  9 Mb SYNCHRONOUS FLOW-THROUGH  STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • Three chip enable option for simple depth expan- sion and address pipelining • ...

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... ADV ADSC ADSP 18/ BWE BW(a-d) x18: a,b x36: a-d CE CE2 CE2 POWER ZZ DOWN OE 2 MODE A0 CLK BINARY COUNTER A1 CLR MEMORY ARRAY 16/17 18/ ADDRESS REGISTER CE CLK 36 DQ(a-d) BYTE WRITE REGISTERS CLK 2/4/8 INPUT D Q REGISTERS ENABLE REGISTER CLK CE CLK 256Kx36; 512Kx18; 36, ...

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BOTTOM VIEW Integrated Silicon Solution, Inc. Rev. H 07/22/2010 119-PIN BGA 119-Ball, 14x22 mm BGA BOTTOM VIEW 3 ...

Page 4

BGA PACKAGE PIN CONFIGURATION DDQ B NC CE2 DQc DQPc E DQc DQc F V DQc DDQ G DQc DQc H DQc DQc DDQ DD K ...

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BGA PACKAGE PIN CONFIGURATION 512k 18 (TOP VIEW DDQ B NC CE2 DQb DQb DDQ G NC DQb H DQb NC J ...

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PBGA PACKAGE PIN CONFIGURATION 256k 36 (TOP VIEW CE2 C DQPc NC V ddq D DQc DQc V ddq E DQc DQc V ddq F DQc DQc ...

Page 7

PBGA PACKAGE PIN CONFIGURATION 512k 18 (TOP VIEW CE2 ddq D NC DQb V ddq E NC DQb V ddq F NC DQb ...

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PIN CONFIGURATION 100 DQPc 1 2 DQc 3 DQc 4 VDDQ 5 VSS 6 DQc 7 DQc 8 DQc 9 ...

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PIN CONFIGURATION 100 VDDQ 5 VSS DQb DQb ...

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TRUTH TABLE (1-8) OPERATION  ADDRESS  CE  Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Deselect Cycle, Power-Down None Snooze Mode, Power-Down None Read Cycle, Begin Burst External Read Cycle, Begin Burst External Write Cycle, Begin Burst External Read Cycle, Begin Burst External Read Cycle, Begin Burst External Read Cycle, Continue Burst Next Read Cycle, Continue Burst Next Read Cycle, Continue Burst Next Read Cycle, Continue Burst Next Write Cycle, Continue Burst Next Write Cycle, Continue Burst ...

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INTERLEAVED BURST ADDRESS TABLE (MODE = V   External Address  1st Burst Address    A1  A0  A1  A0  LINEAR BURST ADDRESS TABLE (MODE = VSS) A1', A0' = 1,1       ABSOLUTE MAxIMUM RATINGS   Symbol  Parameter  T Storage Temperature sTg P Power Dissipation d ...

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OPERATING RANGE (IS61LFxxxxx)   Range  Ambient Temperature  Commercial 0°C to +70°C Industrial -40°C to +85°C OPERATING RANGE (IS64LFxxxxx)   Range  Ambient Temperature  Automotive -40°C to +125°C OPERATING RANGE (IS61VFxxxxx)   Range  Ambient Temperature  Commercial 0°C to +70°C Industrial -40°C to +85°C DC ELECTRICAL CHARACTERISTICS      Symbol  Parameter    V Output HIGH Voltage Oh V Output LOW Voltage Ol V ...

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CAPACITANCE (1,2)   Symbol  Parameter    c Input Capacitance IN c Input/Output Capacitance OuT Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions 25° MHz 3.3V I/O AC TEST CONDITIONS   Parameter    Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load AC TEST LOADS Z = 50Ω O OUTPUT Figure 1 Integrated ...

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Parameter    Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT Z = 50Ω O OUTPUT Figure 3 14 Unit 0V to 2.5V 1.5 ns 1.25V OUTPUT 50Ω 1.25V 1,667 Ω +2. Including 1,538 Ω jig and scope Figure 4 Integrated Silicon ...

Page 15

READ/WRITE CYCLE SWITCHING CHARACTERISTICS         Symbol  Parameter  fmax Clock Frequency t Cycle Time kc t Clock High Time kh t Clock Low Time kl t Clock Access Time kq t Clock High to Output Invalid (2) kqx t Clock High to Output Low-Z (2,3) kqlZ t Clock High to Output High-Z (2,3) ...

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READ/WRITE CYCLE TIMING CLK ADSP t SS ADSC ADV Address RD1 BWE BWd-BWa t t CES CEH CES CEH CE2 t t CES ...

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WRITE CYCLE TIMING CLK ADSP ADSC ADV must be inactive for ADSP Write ADV Address WR1 BWE t WS BWd-BWa WR1 t t CES CEH CE ...

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SNOOZE MODE ELECTRICAL CHARACTERISTICS   Symbol  Parameter    I Current during SNOOZE MODE active to input ignored Pds t ZZ inactive to input sampled Pus t ZZ active to SNOOZE current ZZI t ZZ inactive to exit SNOOZE current rZZI SNOOZE MODE TIMING CLK t PDS ZZ setup cycle ZZ t ...

Page 19

IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG) The IS61LF/VF25636A and IS61LF/VF51218A have a serial boundary scan Test Access Port (TAP) in the PBGA package only. This port operates in accordance with IEEE Standard 1149.1-1900, but does not include all functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because they place added delay in the critical speed path of the SRAM. The TAP controller operates in a manner that does not conflict with the performance of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC standard 2.5V I/O logic levels. DISABLING THE JTAG FEATURE The SRAM can operate without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (Vss) to prevent clocking of the device. TDI and TMS are internally pulled up and may be disconnected. They may alternately be connected to V ...

Page 20

TEST DATA OUT (TDO) The TDO output pin is used to serially clock data-out from the registers. The output is active depending on the current state of the TAP state machine (see TAP Controller State Diagram). The output changes on the falling edge of TCK and TDO is connected to the Least Significant Bit (LSB) of any register. PERFORMING A TAP RESET A Reset is performed by forcing TMS HIGH (V rising edges of TCK. RESET may be performed while the SRAM is operating and does not affect its operation. At power-up, the TAP is internally reset to ensure that TDO comes high-Z state. TAP REGISTERS Registers are connected between the TDI and TDO pins and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK and output on the TDO pin on the falling edge of TCK. Instruction Register Three-bit instructions can be serially loaded into the in- struction register. This register is loaded when it is placed between the TDI and TDO pins. (See TAP Controller Block Diagram) At power-up, the instruction register is loaded with the IDCODE instruction also loaded with the IDCODE instruction if the controller is placed in a reset state as previously described. When the TAP controller is in the CaptureIR state, the two ...

Page 21

TAP INSTRUCTION SET Eight instructions are possible with the three-bit instruction register and all combinations are listed in the Instruction Code table. Three instructions are listed as RESERVED and should not be used and the other five instructions are described below. The TAP controller used in this SRAM is not fully compliant with the 1149.1 convention because some mandatory instructions are not fully implemented. The TAP controller cannot be used to load address, data or control signals and cannot preload the Input or Output buf- fers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/ PRELOAD; instead it performs a capture of the Inputs and Output ring when these instructions are executed. Instruc- tions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted from the instruction register through the TDI and TDO pins. To execute an instruction once it is shifted in, the TAP control- ler must be moved into the Update-IR state. ExTEST EXTEST is a mandatory 1149.1 instruction which executed whenever the instruction register is loaded with all 0s. Because EXTEST is not implemented in the TAP controller, this device is not 1149.1 standard compliant. The T AP controller recognizes an all-0 instruction. W hen an EXTEST instruction is loaded into the instruction register, the SRAM responds SAMPLE/PRELOAD instruction has been loaded. There is a difference between the instruc- ...

Page 22

INSTRUCTION CODES  Code  Instruction  Description 000 EXTEST Captures the Input/Output ring contents. Places the boundary scan register be- tween the TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. 001 IDCODE Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. 010 SAMPLE-Z Captures the Input/Output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. 011 RESERVED Do Not Use: This instruction is reserved for future use. 100 SAMPLE/PRELOAD Captures the Input/Output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. 101 RESERVED Do Not Use: This instruction is reserved for future use. 110 RESERVED Do Not Use: This instruction is reserved for future use. 111 BYPASS Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. TAP CONTROLLER STATE DIAGRAM Test Logic Reset ...

Page 23

TAP Electrical Characteristics Over the Operating Range Symbol  Parameter  V Output HIGH Voltage Oh1 V Output HIGH Voltage Oh2 V Output LOW Voltage Ol1 V Output LOW Voltage Ol2 V Input HIGH Voltage Ih V Input LOW Voltage Il I Input Load Current x Notes: 1. All Voltage referenced to Ground. 2. Overshoot: V (AC) ≤ V +1.5V for t Ih ...

Page 24

TAP AC TEST CONDITIONS Input pulse levels 0 to 2.5V/0 to 3.0V Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage TAP TIMING 1 t THTH TCK TMS TDI TDO 24 TAP Output Load Equivalent 1ns 1.25V/1.5V 1.25V/1.5V 1.25V/1.5V 1.25V/1. TLTH t THTL t t MVTH THMX t t DVTH ...

Page 25

Signal  Bump    B it #  Name  ID  Bit #  Name  ...

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Signal  Bump    B it #  Name  ID  Bit #  1 MODE 11P ...

Page 27

Signal  Bump    B it #  Name  ID  Bit #  1 MODE 11P ...

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... IS61LF25636A-6.5TQ IS61LF25636A-6.5B2 IS61LF25636A-6.5B3 IS61LF25636A-7.5TQ IS61LF25636A-7.5B2 IS61LF25636A-7.5B3 IS61LF51218A-6.5TQ IS61LF51218A-6.5TQL IS61LF51218A-6.5B2 IS61LF51218A-6.5B3 IS61LF51218A-7.5TQ IS61LF51218A-7.5B2 IS61LF51218A-7.5B3 Order Part Number  IS61LF25636A-6.5TQI IS61LF25636A-6.5B2I IS61LF25636A-6.5B3I IS61LF25636A-7.5TQI IS61LF25636A-7.5TQLI IS61LF25636A-7.5B2I IS61LF25636A-7.5B3I IS61LF51218A-6.5TQI IS61LF51218A-6.5B2I IS61LF51218A-6.5B3I IS61LF51218A-7.5TQI IS61LF51218A-7.5TQLI IS61LF51218A-7.5B2I IS61LF51218A-7.5B3I Order Part Number  IS64LF25636A-7.5TQLA3 IS64LF25636A-7.5B3LA3 IS64LF51218A-7.5TQLA3 Package (1) 100 TQFP, 3CE ...

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ORDERING INFORMATION (V Commercial Range: 0°C to +70°C   Configuration  Access Time  256Kx36 6.5 256Kx36 7.5 512Kx18 6.5 512Kx18 7.5 Industrial Range: -40°C to +85°C   Configuration  Access Time    256Kx36 6.5 ...

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Integrated Silicon Solution, Inc. Rev.  H 07/22/2010 ...

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Integrated Silicon Solution, Inc. Rev. H 07/22/2010 31 ...

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Integrated Silicon Solution, Inc. Rev.  H 07/22/2010 ...

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