IS61VPS25636A-200TQLI-TR ISSI, Integrated Silicon Solution Inc, IS61VPS25636A-200TQLI-TR Datasheet - Page 5

• Manufacturer Part Number: IS61VPS25636A-200TQLI-TR
• Description: IC SRAM 9MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPS25636A-200TQLI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 9M (256K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LPS51218A, IS61LPS25636A, IS61LPS25632A, IS64LPS25636A,
IS61VPS51218A, IS61VPS25636A
119 BGA PACKAGE PIN CONFIGURATION
512k
PIN DESCRIPTIONS
Integrated Silicon Solution, Inc.
Rev. K
01/19/10
Note: * A
Symbol
A
A0, A1
ADV
ADSP
ADSC
GW
CLK
CE, CE2
BWx (x=a,b)
BWE
x
M
A
B
C
D
g
H
K
N
R
U
18 (TOP VIEW)
E
F
L
P
T
J
0
and A
1
are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
V
V
V
V
V
Pin Name
Address Inputs
Synchronous Burst Address Inputs
Synchronous Burst Address
Advance
Address Status Processor
Address Status Controller
Global Write Enable
Synchronous Clock
Synchronous Chip Select
Synchronous Byte Write Controls
Byte Write Enable
DQb
DQb
DQb
DQb
NC
NC
NC
NC
NC
NC
NC
NC
DDQ
DDQ
DDQ
DDQ
DDQ
1
DQPb
TMS
DQb
DQb
DQb
DQb
CE2
V
NC
NC
NC
NC
NC
A
A
A
A
2
DD
MODE
BWb
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
TDI
NC
A
A
A
A
3
ADSP
ADSC
BWE
ADV
CLK
TCK
GW
V
V
V
NC
OE
NC
A
A
NC
CE
4
DD
DD
DD
1
0
*
*
Symbol
OE
ZZ
MODE
TCK, TDO
TMS, TDI
NC
DQa-DQb
DQPa-Pb
V
V
Vss
BWa
TDO
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
Vss
NC
NC
dd
ddq
A
A
A
A
5
DQPa
DQa
DQa
DQa
DQa
V
NC
NC
NC
NC
NC
NC
A
A
A
A
A
6
DD
Power Supply
Pin Name
Output Enable
Power Sleep Mode
Burst Sequence Selection
JTAG Pins
No Connect
Data Inputs/Outputs
Output Power Supply
Output Power Supply
Ground
V
V
V
V
V
DQa
DQa
DQa
DQa
NC
NC
NC
NC
NC
NC
NC
ZZ
DDQ
DDQ
DDQ
DDQ
DDQ
7
5