IS62WV102416BLL-25TLI-TR ISSI, Integrated Silicon Solution Inc, IS62WV102416BLL-25TLI-TR Datasheet - Page 6
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IS62WV102416BLL-25TLI-TR
Manufacturer Part Number
IS62WV102416BLL-25TLI-TR
Description
IC SRAM 16MBIT 25NS 48TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet
1.IS62WV102416BLL-25TLI-TR.pdf
(17 pages)
Specifications of IS62WV102416BLL-25TLI-TR
Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
16M (1M x 16)
Speed
25ns
Interface
Parallel
Voltage - Supply
1.65 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS62WV102416ALL
IS62WV102416BLL
IS65WV102416BLL
DC ELECTRICAL CHARACTERISTICS
V
Note:
1. V
DC ELECTRICAL CHARACTERISTICS
V
Notes:
1. V
6
DD
DD
Symbol
V
V
V
V
I
I
V
Symbol
V
V
V
V
I
I
V
IL
LI
LO
LI
LO
IH
IL
IH
OH
OH
OL
IH
IL
(min.) = –0.3V DC; V
OL
IH
IL (1)
(min.) = –0.3V DC; V
= 2.4V-3.6V
= 1.65V-2.2V
(max.) = V
(max.) = V
DD
DD
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
+ 0.3V DC; V
+ 0.3V DC; V
IL
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
IL
(min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
IH
IH
(max.) = V
(max.) = V
(1)
DD
DD
+ 2.0V AC (pulse width < 10 ns). Not 100% tested.
+ 2.0V AC (pulse width < 10ns). Not 100% tested.
Test Conditions
I
I
GND
GND
OH
OL
Test Conditions
V
V
GND
GND
= 0.1 mA
= -0.1 mA
DD
DD
= Min., I
= Min., I
V
V
(Over Operating Range)
(Over Operating Range)
IN
OUT
V
V
OUT
IN
V
OH
OL
DD
V
V
DD
= 1.0 mA
DD
V
= –1.0 mA
, Outputs Disabled
DD
, Outputs Disabled
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
Integrated Silicon Solution, Inc. — www.issi.com
V
DD
Vcc – 0.4V
Min.
–0.2
1.4
–1
–1
—
Min.
–0.3
1.8
2.0
—
–1
–1
V
DD
Max.
V
0.2
0.4
—
1
1
DD
+ 0.2
Max.
0.4
0.8
—
1
1
+ 0.3
Unit
Unit
01/18/08
µA
µA
µA
µA
Rev. A
V
V
V
V
V
V
V
V