IS61LF102418A-7.5TQ-TR ISSI, Integrated Silicon Solution Inc, IS61LF102418A-7.5TQ-TR Datasheet

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IS61LF102418A-7.5TQ-TR

Manufacturer Part Number
IS61LF102418A-7.5TQ-TR
Description
IC SRAM 18MBIT 7.5NS 165FBGA
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS61LF102418A-7.5TQ-TR

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
18M (1M x 18)
Speed
7.5ns
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS61LF102418A-7.5TQ-TR
Manufacturer:
ISSI, Integrated Silicon Solution Inc
Quantity:
10 000
256K x 72, 512K x 36, 1024K x 18
18Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
• Burst sequence control using MODE input
• Three chip enable option for simple depth expan-
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• JTAG Boundary Scan for PBGA package
• Power Supply
• JEDEC 100-Pin TQFP, 119-pin PBGA, 209-Ball
• Lead-free available
FAST ACCESS TIME
Integrated Silicon Solution, Inc.
Rev. K
07/29/2010
IS61LF25672A
IS61LF51236A
IS61LF102418A IS61VF102418A
Copyright © 2010 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
control
sion and address pipelining
LF: V
VF: V
PBGA and 165-pin PBGA packages.
Symbol
t
t
KQ
KC
DD
DD
3.3V + 5%, V
2.5V + 5%, V
Parameter
Clock Access Time
Cycle Time
Frequency
DDQ
DDQ
3.3V/2.5V + 5%
2.5V + 5%
IS61VF25672A
IS61VF51236A
DESCRIPTION
The
IS61LF/VF102418A are high-speed, low-power synchro-
nous static RAMs designed to provide burstable, high-
performance memory for communication and networking
applications. The IS61LF/VF25672A is organized as
262,144 words by 72 bits. The IS61LF/VF51236A is orga-
nized as 524,288 words by 36 bits. The IS61LF/VF102418A
is organized as 1,048,576 words by 18 bits. Fabricated
with
grates a 2-bit burst counter, high-speed SRAM core, and
high-drive capability outputs into a single monolithic cir-
cuit. All synchronous inputs pass through registers con-
trolled by a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address ad-
vance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
-6.5
133
6.5
7.5
ISSI
ISSI
's advanced CMOS technology, the device inte-
IS61LF/VF25672A, IS61LF/VF51236A and
-7.5
117
7.5
8.5
Units
MHz
ns
ns
JULY 2010
1

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IS61LF102418A-7.5TQ-TR Summary of contents

Page 1

... IS61LF25672A IS61VF25672A IS61LF51236A IS61VF51236A IS61LF102418A IS61VF102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and control • Burst sequence control using MODE input • ...

Page 2

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A BLOCK DIAGRAM CLK ADV ADSC ADSP 19/ BWE BW(a-h) x18: a,b x36: a-d x72: a-h CE CE2 CE2 POWER ZZ DOWN OE 2 IS61LF102418A MODE A0 CLK BINARY COUNTER A1 CLR MEMORY ARRAY 17/18 19/ ADDRESS REGISTER CE CLK 36, DQ(a-d) BYTE WRITE REGISTERS CLK ...

Page 3

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A 165-PIN BGA 165-Ball, 13x15 mm BGA BOTTOM VIEW 209-BALL BGA 209-Ball BGA 1 mm Ball Pitch Ball Array BOTTOM VIEW Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 119-PIN BGA 119-Ball, 14x22 mm BGA BOTTOM VIEW 3 ...

Page 4

... Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance ADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CE, CE2, CE2 Synchronous Chip Select BWx (x=a,b,c,d Synchronous Byte Write e,f,g,h) Controls 4 IS61LF102418A ADSP ADSC ADV CE2 BWg BWE NC A BWd ...

Page 5

... Synchronous Burst Address Advance. ADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CE Synchronous Chip Select BWx (x=a-d) Synchronous Byte Write Controls BWE Byte Write Enable Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 512K 36 (TOP VIEW ADSP ADSC ...

Page 6

... A0, A1 Synchronous Burst Address Inputs ADV Synchronous Burst Address Advance. ADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CE Synchronous Chip Select BWx (x=a,b) Synchronous Byte Write Controls BWE Byte Write Enable 6 IS61LF102418A ADSP ADSC Vss ...

Page 7

... ADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CE, CE2, CE2 Synchronous Chip Select BWx (x=a,b,c,d) Synchronous Byte Write Controls Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A BWc BWb CE2 BWE BWd BWa GW CLK Vss Vss ...

Page 8

... ADV Synchronous Burst Address Advance. ADSP Address Status Processor ADSC Address Status Controller GW Global Write Enable CLK Synchronous Clock CE, CE2, CE2 Synchronous Chip Select BWx (x=a,b) Synchronous Byte Write Controls 8 IS61LF102418A BWb CE2 BWE NC BWa GW NC CLK Vss Vss Vss Vss ...

Page 9

... ADV Synchronous Burst Address Advance BWa-BWd Synchronous Byte Write Enable BWE Synchronous Byte Write Enable CE, CE2, CE2 Synchronous Chip Enable CLK Synchronous Clock DQa-DQd Synchronous Data Input/Output Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 80 DQPb 79 DQb 78 DQb 77 VDDQ 76 VSS 75 DQb 74 DQb ...

Page 10

... ADSC Synchronous Controller Address Status ADSP Synchronous Processor Address Status ADV Synchronous Burst Address Advance BWa-BWb Synchronous Byte Write Enable BWE Synchronous Byte Write Enable CE, CE2, CE2 Synchronous Chip Enable CLK Synchronous Clock DQa-DQb Synchronous Data Input/Output 10 IS61LF102418A VDDQ 76 VSS DQPa 73 ...

Page 11

... ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification. Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A ...

Page 12

... BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification. PARTIAL TRUTH TABLE BWE BWE BWE BWE BWE Function Read H H Read H L Write Byte Write All Bytes H L Write All Bytes IS61LF102418A ADDRESS ADSP ADSP ADSP ADSP ADSP ADSC ADSC ADSC ADSC ADSC None External External External ...

Page 13

... This device contains circuitry that will ensure the output devices are in High-Z at power up. Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A or No Connect) DD 2nd Burst Address 3rd Burst Address A1 A0 ...

Page 14

... Sleep Mode ZZ> Note: 1. MODE pin has an internal pullup and should be tied 0.2V or ≥ – 0.2V IS61LF102418A V DD 3.3V ± 5% 3.3V/2.5V ± 5% 3.3V ± 5% 3.3V/2.5V ± 2.5V ± 5% 2.5V ± 5% (Over Operating Range) 3.3V Min. = –4.0 mA (3.3V) 2 –1.0 mA (2.5V 8.0 mA (3.3V) — ...

Page 15

... Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load AC TEST LOADS Z = 50Ω O OUTPUT Figure 1 Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A Conditions Max OUT = 3.3V. DD Unit 0V to 3.0V 1.5 ns 1.5V See Figures 1 and 2 3 ...

Page 16

... Input Rise and Fall Times Input and Output Timing and Reference Level Output Load See Figures 3 and 4 2.5V I/O OUTPUT LOAD EQUIVALENT Z = 50Ω O OUTPUT Figure 3 16 IS61LF102418A Unit 0V to 2.5V 1.5 ns 1.25V OUTPUT 50Ω 1.25V 1,667 Ω +2. Including 1,538 Ω ...

Page 17

... Notes: 1. Configuration signal MODE is static and must not change during normal operation. 2. Guaranteed but not 100% tested. This parameter is periodically sampled. 3. Tested with load in Figure 2. Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A (1) (Over Operating Range) 6.5 7.5 Min. Max. Min. Max. ...

Page 18

... CES CEH CES CEH CE2 t t CES CEH CE2 OE High-Z DATA OUT t KQLZ t KQ High-Z DATA IN Single Read Flow-through 18 IS61LF102418A ADSP is blocked by CE inactive t SH WR1 RD2 WR1 CE2 and CE2 only sampled with ADSP or ADSC t OEHZ t OEQX High KQLZ t ...

Page 19

... CES CEH CE2 t t CES CEH CE2 OE High-Z DATA OUT t DS High-Z DATA IN 1a Single Write Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A ADSP is blocked by CE1 inactive t t AVH AVS WR2 WR2 CE1 Masks ADSP CE2 and CE3 only sampled with ADSP or ADSC ...

Page 20

... RZZI SNOOZE MODE TIMING CLK t PDS ZZ setup cycle ZZ t ZZI Isupply I SB2 All Inputs Deselect or Read Only (except ZZ) Outputs (Q) 20 IS61LF102418A Conditions Min. ZZ ≥ Vih — — 2 — recovery cycle t RZZI Deselect or Read Only High-Z Integrated Silicon Solution, Inc. Max. Unit 60 ...

Page 21

... TAP CONTROLLER TMS Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A TEST ACCESS PORT (TAP) - TEST CLOCK The test clock is only used with the TAP controller. All inputs are captured on the rising edge of TCK and outputs are driven from the falling edge of TCK. ...

Page 22

... ISSI JEDEC ID (11:1) Allows unique identification of SRAM vendor. 00011010101 ID Register Presence (0) Indicate the presence register. 22 IS61LF102418A is set LOW (Vss) when the BYPASS instruction is ex- ecuted. Boundary Scan Register The boundary scan register is connected to all input and output pins on the SRAM. Several no connect (NC) pins are also included in the scan register to reserve pins for higher density devices ...

Page 23

... TAP controller Shift-DR state. It also places all SRAM outputs into a High-Z state. Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not imple- mented, so the TAP controller is not fully 1149.1 compli- ant ...

Page 24

... Do Not Use: This instruction is reserved for future use. 111 BYPASS Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. TAP CONTROLLER STATE DIAGRAM Test Logic Reset 1 0 Run Test/Idle 0 24 IS61LF102418A 1 1 Select Capture DR 0 Shift ...

Page 25

... Notes: 1. Both t and t refer to the set-up and hold time requirements of latching data from the boundary scan register Test conditions are specified using the load in TAP AC test conditions. t Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A (1,2) Test Conditions I = –2 –100 μ 2 100 μ ...

Page 26

... Input pulse levels 0 to 2.5V/0 to 3.0V Input rise and fall times Input timing reference levels Output reference levels Test load termination supply voltage TAP TIMING 1 t THTH TCK TMS TDI TDO 26 IS61LF102418A TAP Output Load Equivalent 1ns 1.25V/1.5V 1.25V/1.5V 1.25V/1.5V 1.25V/1. TLTH t THTL t ...

Page 27

... DQa 11J 36 17 DQa 10M 37 18 DQa 10L 38 19 DQa 10K 39 20 DQa 10J 40 Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A Signal Bump Signal Name ID Bit # Name DQb 11G 41 NC CE2 DQb 11F 42 BWa DQb 11E 43 BWb DQb 11D 44 BWc ...

Page 28

... NC 11L 11K 11J 36 17 DQa 10M 37 18 DQa 10L 38 19 DQa 10K 39 20 DQa 10J 40 28 IS61LF102418A Signal Bump Signal Name ID Bit # Name DQa 11G 41 NC CE2 DQa 11F 42 BWa DQa 11E 43 DQa 11D 44 NC BWb DQa 11C 45 NC 10F ...

Page 29

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A 209 BOUNDARY SCAN ORDER (256K X 72) Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 29 ...

Page 30

... Order Part Number IS61LF25672A-6.5B1I IS61LF51236A-6.5TQI IS61LF51236A-6.5TQLI IS61LF51236A-6.5B2I IS61LF51236A-6.5B2LI IS61LF51236A-6.5B3I IS61LF51236A-7.5TQI IS61LF51236A-7.5TQLI IS61LF51236A-7.5B2I IS61LF51236A-7.5B3I IS61LF51236A-7.5B3LI IS61LF102418A-6.5TQI IS61LF102418A-6.5B2I IS61LF102418A-6.5B3I IS61LF102418A-7.5TQI IS61LF102418A-7.5TQLI IS61LF102418A-7.5B2I IS61LF102418A-7.5B3I IS61LF102418A-7.5B3LI Package 209 PBGA 100 TQFP 119 PBGA 165 PBGA 100 TQFP 119 PBGA 165 PBGA 100 TQFP 100 TQFP, Lead-free ...

Page 31

... Industrial Range: -40°C to +85°C Configuration Access Time 256Kx72 6.5 512Kx36 6.5 512Kx36 7.5 1Mx18 6.5 1Mx18 7.5 Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A = 2. 2.5V) DD DDQ Order Part Number IS61VF25672A-6.5B1 IS61VF51236A-6.5TQ IS61VF51236A-6.5B2 IS61VF51236A-6.5B3 IS61VF51236A-7.5TQ IS61VF51236A-7.5B2 IS61VF51236A-7.5B3 IS61VF102418A-6.5TQ IS61VF102418A-6.5B2 IS61VF102418A-6.5B3 IS61VF102418A-7.5TQ IS61VF102418A-7 ...

Page 32

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A 32 IS61LF102418A Integrated Silicon Solution, Inc. Rev. K 07/29/2010 ...

Page 33

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 33 ...

Page 34

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A 34 IS61LF102418A Integrated Silicon Solution, Inc. Rev. K 07/29/2010 ...

Page 35

... IS61LF25672A IS61LF51236A IS61VF25672A IS61VF51236A IS61VF102418A Integrated Silicon Solution, Inc. Rev. K 07/29/2010 IS61LF102418A 35 ...

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