IS61VPD51236A-200TQ-TR ISSI, Integrated Silicon Solution Inc, IS61VPD51236A-200TQ-TR Datasheet - Page 12

• Manufacturer Part Number: IS61VPD51236A-200TQ-TR
• Description: IC SRAM 18MBIT 200MHZ 100TQFP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61VPD51236A-200TQ-TR

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous
• Memory Size: 18M (512K x 36)
• Speed: 200MHz
• Interface: Parallel
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 100-TQFP, 100-VQFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61VPD51236A, IS61VPD102418A, IS61LPD51236A ,IS61LPD102418A
3.3V I/O aC TEST CONDITIONS
aC TEST lOaDS
12
CaPaCITaNCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Symbol
c
c
IN
OuT
Output
Buffer
Parameter
Input Capacitance
Input/Output Capacitance
A
(1,2)
= 25°c, f = 1 MHz, V
Z
O
Figure 1
= 50Ω
dd
= 3.3V.
See Figures 1 and 2
1.5V
0V to 3.0V
1.5 ns
50Ω
1.5V
Unit
Conditions
V
V
OuT
IN
= 0V
= 0V
Integrated Silicon Solution, Inc. — 1-800-379-4774
OUTPUT
3.3V
Max.
6
8
Including
Figure 2
jig and
scope
5 pF
Unit
pF
pF
317 Ω
351 Ω
07/08/08
Rev. C