IS42S32160C-75BLI-TR ISSI, Integrated Silicon Solution Inc, IS42S32160C-75BLI-TR Datasheet - Page 15

• Manufacturer Part Number: IS42S32160C-75BLI-TR
• Description: IC SDRAM 512MBIT 133MHZ 90BGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32160C-75BLI-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 512M (16M x 32)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 90-BGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32160C
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
01/22/09
Column Address
Burst Type Field (A3)
The Burst Type can be one of two modes,Interleave Mode or Sequential Mode.
• Addressing Sequence of Sequential Mode
Burst Length
Burst Length Field (A2~A0)
This field specifies the data length of column access using the A2~A0 pins and selects the Burst Length to be 2,
4, 8, or full page.
*Note:RFU (Reserved for future use)should stay 0 during MRS cycle.
The mode register is divided into various fields depending on functionality.
Address BS0,1 A12-A10
Function
Data n
An internal column address is performed by increasing the address from the column address which is input to the
device.The internal column address is varied by the Burst Length as shown in the following table. When the value
of column address,(n +m),in the table is larger than 255, only the least significant 8 bits are effective.
Full Page: Column address is repeated until terminated.
0
n
RFU*
4 words:
2 words:
8 words:
n+1
1
n+2
2
WBL
A9
n+3
A2
0
0
0
0
1
1
1
1
3
M
A8
Test Mode
A3
0
1
n+4
4
0
0
1
1
0
0
1
1
A1
Sequential
Interleave
Burst Type
A7
n+5
5
0
1
0
1
1
0
1
0
A0
A6
n+6
CAS Latency
6
1
2
4
8
Reserved
Reserved
Reserved
Full Page
Burst Length
A5
n+7
7
A4
-
-
n+255
255
BT
A3
256
n
A2
Burst Length
257
n+1
A1
-
-
A0
15