M25PE16-VMW6TG NUMONYX, M25PE16-VMW6TG Datasheet - Page 23
![IC FLASH 16MBIT 75MHZ 8SOIC](/photos/7/28/72835/m25pe16-vmw6tg_sml.jpg)
M25PE16-VMW6TG
Manufacturer Part Number
M25PE16-VMW6TG
Description
IC FLASH 16MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.M45PE16-VMP6TG.pdf
(58 pages)
Specifications of M25PE16-VMW6TG
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (2M x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Package
8SOIC W
Cell Type
NOR
Density
16 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
64KByte x 32
Timing Type
Synchronous
Interface Type
Serial-SPI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
M25PE16-VMW6TGTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25PE16-VMW6TG
Manufacturer:
MAXIM
Quantity:
14 500
Company:
Part Number:
M25PE16-VMW6TG
Manufacturer:
Numonyx
Quantity:
15 000
Part Number:
M25PE16-VMW6TG
Manufacturer:
ST
Quantity:
20 000
M25PE16
6.2
Write disable (WRDI)
The write disable (WRDI) instruction
The write disable (WRDI) instruction is entered by driving Chip Select (S) Low, sending the
instruction code, and then driving Chip Select (S) High.
The write enable latch (WEL) bit is reset under the following conditions:
Figure 7.
Power-up
Write disable (WRDI) instruction completion
Write status register (WRSR) instruction completion
Page write (PW) instruction completion
Page program (PP) instruction completion
Write to lock register (WRLR) instruction completion
Page erase (PE) instruction completion
Sector erase (SE) instruction completion
Subsector erase (SSE) instruction completion
Bulk erase (BE) instruction completion
Write disable (WRDI) instruction sequence
S
C
D
Q
High Impedance
0
(Figure
1
2
Instruction
7) resets the write enable latch (WEL) bit.
3
4
5
6
7
AI03750D
Instructions
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