LHF00L30 Sharp Microelectronics, LHF00L30 Datasheet - Page 20
![IC FLASH 16MBIT 70NS 48TSOP](/photos/7/28/72868/lhf00l30_sml.jpg)
LHF00L30
Manufacturer Part Number
LHF00L30
Description
IC FLASH 16MBIT 70NS 48TSOP
Manufacturer
Sharp Microelectronics
Datasheet
1.LHF00L30.pdf
(33 pages)
Specifications of LHF00L30
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
16M (1M x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
425-1887
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values are the reference values at V
2. I
3. Block erase, full chip erase, program and OTP program are inhibited when V
4. The Automatic Power Savings (APS) feature automatically places the device in power save mode after read cycle
5. Sampled, not 100% tested.
6. V
7. For all pins other than those shown in test conditions, input level is V
V
V
V
V
V
V
V
V
Symbol
IL
IH
OL
OH
PPLK
PPH1
PPH2
LKO
T
mode, the device’s current draw is the sum of I
mode, the device’s current draw is the sum of I
between V
completion. Standard address access timings (t
executed and should not be attempted.
Applying 12.0V±0.3V to V
supplies the memory cell current for block erasing and programming. Use similar power supply trace widths and layout
considerations given to the V
Applying 12.0V±0.3V to V
may be connected to 12.0V±0.3V for a total of 80 hours maximum.
CCWS
A
PP
=+25°C unless V
is not used for power supply pin. With V
and I
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
V
Erase, Program or OTP Program
Operations
V
Erase, Program or OTP Program
Operations
V
Operations
PP
PP
PP
CC
PPLK
CCES
Lockout during Normal
Lockout Voltage
during Block Erase, Full Chip
during Block Erase, Full Chip
(max.) and V
are specified with the device de-selected. If read or program is executed while in block erase suspend
CC
Parameter
is specified.
PP
PP
PPH1
CC
provides fast erasing or fast programming mode. In this mode, V
during erase/program can only be done for a maximum of 1,000 cycles on each block. V
power bus.
(min.), between V
DC Characteristics (Continued)
PP
AVQV
CCWS
≤V
CCES
Notes
3,5,6
PPLK
V
PPH1
5
5
5
5
6
6
) provide new data when addresses are changed.
LHF00L30
CC
and I
and I
, block erase, full chip erase, program and OTP program cannot be
=2.7V-3.6V
(max.) and V
CCR
V
Min.
1.65
11.7
-0.4
-0.2
CCR
2.4
1.5
CCQ
.
or I
CCW
Typ.
12.0
CCQ
PPH2
3.0
. If read is executed while in program suspend
or GND.
(min.), and above V
V
Max.
+ 0.4
PP
12.3
0.4
0.4
0.2
3.6
CCQ
≤V
PPLK
, and not guaranteed in the range
Unit
V
V
V
V
V
V
V
V
PPH2
CC
PP
V
V
I
V
V
I
OL
OH
=3.0V, V
is power supply pin and
CC
CCQ
CC
CCQ
(max.).
=100µA
=-100µA
Test Conditions
=V
=V
=V
=V
CC
CC
CCQ
CCQ
CCQ
Min.,
Min.,
Rev. 2.45
Min.,
Min.,
=3.0V and
17
PP