N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 127

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N25Q128A13BSF40F

Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BSF40F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer:
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15 000
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N25Q128 - 3 V
9.3.23
DQ0
DQ1
DQ3
DQ2
Figure 97. Read Volatile Configuration Register instruction sequence QIO-SPI
Write Volatile Configuration Register
The Write Volatile Configuration register (WRVCR) instruction allows new values to be
written to the Volatile Configuration register. Before it can be accepted, a write enable
(WREN) instruction must previously have been executed.
Except for the parallelizing of the instruction code and the input data on the four pins DQ0,
DQ1, DQ2 and DQ3, the instruction functionality is exactly the same as the Write Volatile
Configuration Register (WRVCR) instruction of the Extended SPI protocol.
Figure 98. Write Volatile Configuration Register instruction sequence QIO-SPI
S
C
Instruction
0
DQ0
DQ1
DQ3
DQ2
1
S
C
2
5
4
6
7
3
1
0
2
3
4
5
4
6
7
Volatile Configuration Register Out
5
1
0
2
3
0
6
5
4
6
7
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
7
1
0
2
3
2
Volatile Configuration
5
4
6
7
8
5
4
6
7
3
1
0
2
3
Register In
9 10 11 12 13 14 15
0
1
3
2
5
4
7
6
1
0
3
2
4
5
7
6
0
1
3
2
4
5
7
©2010 Micron Technology, Inc. All rights reserved.
6
0
1
3
2
Instructions
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