N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 83

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N25Q128A13BSF40F

Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of N25Q128A13BSF40F

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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N25Q128 - 3 V
9.1.27
9.1.28
S
C
DQ0
DQ1
Table 23.
1. Values of (b1, b0) after power-up are defined in
Read Flag Status Register
The Read Flag Status Register (RFSR) instruction allows the Flag Status Register to be
read. The Status Register may be read at any time, even while a Program or Erase is in
progress. When one of these cycles is in progress, it is recommended to check the P/E
Controller bit (Not WIP) bit before sending a new instruction to the device. It is also possible
to read the Flag Register continuously, as shown here.
Figure 35. Read Flag Status Register instruction sequence
Clear Flag Status Register
The Clear Flag Status Register (CLFSR) instruction reset the error Flag Status Register bits
(Erase Error bit, Program Error bit, VPP Error bit, Protection Error bit). It is not necessary to
set the WEL bit before the Clear Flag Status Register instruction is executed. The WEL bit
will be unchanged after this command is executed.
All sectors
0
High Impedance
1
2
Sector
Instruction
3
Lock Register in
4
5
6
7
b7-b2
Bit
b1
b0
7
8
(1)
Flag Status Register Out
6
9 10 11 12 13 14 15
Sector Lock Down bit value (refer to
Sector Write Lock bit value (refer to
5
MSB
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Section 7: Protection
3
2
1
0
7
Flag Status Register Out
modes.
6
Value
‘0’
5
©2010 Micron Technology, Inc. All rights reserved.
MSB
4
Table
Table
3
22)
22)
2
1
Instructions
0
7
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