N25Q128A13BSF40F NUMONYX, N25Q128A13BSF40F Datasheet - Page 143
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N25Q128A13BSF40F
Manufacturer Part Number
N25Q128A13BSF40F
Description
IC SRL FLASH 128MB NMX 16-SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet
1.N25Q128A13B1240F.pdf
(157 pages)
Specifications of N25Q128A13BSF40F
Format - Memory
FLASH
Memory Type
FLASH
Memory Size
128M (16M x 8)
Speed
108MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
15 000
Part Number:
N25Q128A13BSF40F
Manufacturer:
MICRON
Quantity:
20 000
N25Q128 - 3 V
Table 36.
1. tCH + tCL must be greater than or equal to 1/ fC.
2. Typical values given for TA = 25 °C
3. Value guaranteed by characterization, not 100% tested in production.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to '1'.
6. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure)
7. When using the page program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
tVPPHSL
tW
tCFSR
tWNVCR
tWVCR
tWRVECR
tPP
tSSE
tSE
tSE
tBE
tBE
Symbol
is known.
sequence including all the bytes versus several sequences of only a few bytes (1 < n < 256).
(7)
(6)
AC Characteristics (page 2 of 2)
Figure 107. Reset AC waveforms while a program or erase cycle is in progress
Reset
S
Alt.
Enhanced program supply voltage High
(VPPH) to Chip Select Low for Single and
Dual I/O Page Program
Write status register cycle time
Clear flag status register cycle time
Write non volatile configuration register
cycle time
Write volatile configuration register cycle
time
Write volatile enhanced
configurationregister cycle time
Page program cycle time (n bytes)
Program OTP cycle time (64 bytes)
Subsector erase cycle time
Sector erase cycle time
Sector erase VPP = VPPH
Bulk erase cycle time
VPP = VPPH
Parameter
tSHRV
Micron Technology, Inc., reserves the right to change products or specifications without notice.
tRLRH
200
Min
tRHSL
1.3
40
0.2
40
40
int(n/8) ×
0.015
0.2
0.2
0.7
0.6
170
160
©2010 Micron Technology, Inc. All rights reserved.
Typ
(8)
DC and AC parameters
(2)
8
3
5
2
3
3
250
250
Max
143/157
Unit
ms
ms
ms
ns
ns
ns
ns
s
s
s
s
s
s