NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 28

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Device operations
Figure 11. Copy back program
Figure 12. Page copy back program with random data input
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RB
I/O
RB
I/O
Read
Code
00h
Read
Code
00h
Add Inputs
Source
Add Inputs
(Read Busy time)
Source
tBLBH1
35h
(Read Busy time)
Busy
tBLBH1
35h
Copy Back
85h
Code
Busy
Copy Back
Add Inputs
Code
85h
Target
Add Inputs
Target
Data
Unlimited number of repetitions
85h
Add Inputs
2 Cycle
(Program Busy time)
NAND01G-B2B, NAND02G-B2C
tBLBH2
10h
(Program Busy time)
Data
tBLBH2
Busy
Read Status Register
10h
70h
Busy
70h
SR0
ai09858b
SR0
ai11001