NAND01GW3B2CN6E NUMONYX, NAND01GW3B2CN6E Datasheet - Page 34

• Manufacturer Part Number: NAND01GW3B2CN6E
• Description: IC FLASH 1GBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND01GW3B2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 1G (128M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 1Gb
• Access Time (max): 25us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 8b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 128M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

Device operations
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Table 16.
I/O1-I/O0
I/O7, I/O3
I/O5-I/O4
I/O2
I/O6
I/O
Electronic signature byte/word 4
(without spare area)
Minimum sequential
(without spare area)
Spare area size
(byte/512-byte)
Organization
access time
Definition
Block size
Page size
Value
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0
1
0
1
NAND01G-B2B, NAND02G-B2C
Description
128 Kbytes
256 Kbytes
64 Kbytes
Reserved
Reserved
Reserved
Reserved
2 Kbytes
1 Kbyte
50 ns
30 ns
25 ns
X16
X8
16
8