CY14E256LA-SZ45XI Cypress Semiconductor Corp, CY14E256LA-SZ45XI Datasheet
CY14E256LA-SZ45XI
Specifications of CY14E256LA-SZ45XI
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CY14E256LA-SZ45XI Summary of contents
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... Cypress Semiconductor Corporation Document Number: 001-54952 Rev. *F 256-Kbit (32 K × 8) Nonvolatile SRAM Functional Description The Cypress CY14E256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 KB. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory ...
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... Hardware STORE Cycle ................................................. 14 Truth Table For SRAM Operations ................................ 15 Ordering Information ...................................................... 15 Ordering Code Definition ........................................... 15 Package Diagrams .......................................................... 16 Acronyms ........................................................................ 17 Acronyms Used ......................................................... 17 Document Conventions ................................................. 17 Units of Measure ....................................................... 17 Document History Page ................................................. 18 Sales, Solutions, and Legal Information ...................... 19 Worldwide Sales and Design Support ....................... 19 Products .................................................................... 19 PSoC Solutions ......................................................... 19 CY14E256LA Page [+] Feedback ...
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... Address expansion for 4 Mbit. NC pin not connected to die. 4. Address expansion for 8 Mbit. NC pin not connected to die. 5. Address expansion for 16 Mbit. NC pin not connected to die. Document Number: 001-54952 Rev. *F [4] [3] [2] [1] [ Description CY14E256LA 32 – SOIC (x8) Top View (not to scale) ) with standard output high HHHD Page [+] Feedback ...
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... Refer to the Truth Table For SRAM Operations complete description of read and write modes. SRAM Read The CY14E256LA performs a read cycle when CE and OE are LOW and WE and HSB are HIGH. The address specified on pins A determines which of the 32,768 data bytes each are 0-14 accessed ...
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... L H Notes 6. While there are 15 address lines on the CY14E256LA, only the lower 14 are used to control software modes. 7. The six consecutive address locations must be in the order listed. WE must be HIGH during all six cycles to enable a nonvolatile cycle. Document Number: 001-54952 Rev initiate the Software STORE cycle, the following read ...
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... Output data Output data Output data Output data [7] Output data Active I CC2 Output data Output data Output data Output data Output high Z [7] Output data Active Output data Output data Output data Output data Output high the CY14E256LA write mode Page [+] Feedback ...
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... V value to make sure there is extra CAP store charge and store time should discuss their V selection with Cypress to understand any impact on the V voltage level at the end period. RECALL CY14E256LA value because CAP charge and CAP value. Customers CAP size ...
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... CC = Max, V < V < Max, V < V < Max, V < V < > OUT – pin and rated CAP SS CY14E256LA + 2 °C)...................................................1.0 W Ambient Temperature V CC –40 °C to +85 °C 4 5.5 V [8] Min Typ Max 4.5 5.0 5.5 – – – – 10 – 35 – – – ...
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... MHz (Typ Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. Figure 3. AC Test Loads 5.0 V OUTPUT 512 Ω CY14E256LA Min Unit 20 Years 1,000 K Max Unit 44-TSOP II 32-SOIC Unit °C/W 41.74 41.55 ° ...
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... HSB must remain HIGH during READ and WRITE cycles. Document Number: 001-54952 Rev Description Min – 25 – – – 0 – 0 – – 3 [11, 12, 16 Address Valid t AA Output Data Valid t OHA CY14E256LA 45 ns Unit Max Min Max 25 – – 45 – – – – 3 – ns – 3 – – – ...
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... Document Number: 001-54952 Rev. *F Address Valid ACE LZCE t DOE t LZOE Output Data Valid t PU Active [18, 19, 20 Address Valid t SCE PWE Input Data Valid t t LZWE HZWE High Impedance [18, 19, 20 Address Valid SCE t PWE Input Data Valid High Impedance CY14E256LA [17, 18] t HZCE t HZOE Page [+] Feedback ...
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... Figure 8. AutoStore or Power-up RECALL 22 t Note t STORE HHHD t LZHSB t DELAY t HRECALL Read & Write BROWN POWER-UP OUT RECALL AutoStore SWITCH. is less than V CC SWITCH. CY14E256LA CY14E256LA Unit Min Max – 20 – 8 – 25 – 4.4 150 – – 1.9 – 5 – 500 [25 Note ...
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... HZCE t DELAY Note Figure 10. AutoStore Enable / Disable Cycle t RC Address # HZCE Note Table 1 on page 5. WE must be HIGH during all six consecutive cycles. time. DELAY CY14E256LA Unit Max Min Max – 45 – – 0 – – 30 – – 0 – 200 – 200 ...
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... HSB pin is driven high to V 100 K resistor, HSB driver is disabled SRAM is disabled as long as HSB (IN) is driven LOW. t DHSB t DHSB [30, 31] Figure 12. Soft Sequence Processing t Soft Sequence SS Command Address #6 Address # CY14E256LA CY14E256LA Unit Min Max – – ns μs – 100 t HHHD t LZHSB only by Internal ...
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... High Data in (DQ Ordering Information Speed Ordering Code (ns) 25 CY14E256LA-SZ25XIT CY14E256LA-SZ25XI 45 CY14E256LA-SZ45XIT CY14E256LA-SZ45XI All the mentioned parts are Pb-free. Ordering Code Definition 256 L A- Pb-Free Die revision: Blank – No rev st A – 1 Rev Voltage: E – 5 – nvSRAM Cypress Document Number: 001-54952 Rev. *F ...
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... Figure 14. 32-Pin SOIC (51-85127) PIN DIMENSIONS IN INCHES[MM] 0.292[7.416] 0.299[7.594] REFERENCE JEDEC MO-119 0.405[10.287] 0.419[10.642] 32 SEATING PLANE 0.090[2.286] 0.100[2.540] 0.004[0.101] 0.026[0.660] 0.032[0.812] 0.004[0.101] 0.0100[0.254] CY14E256LA 51-85087 *C MIN. MAX. PART # S32.3 STANDARD PKG. SZ32.3 LEAD FREE PKG. 0.006[0.152] 0.021[0.533] 0.012[0.304] 0.041[1.041] 51-85127 *B Page [+] Feedback ...
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... Document Number: 001-54952 Rev. *F Document Conventions Units of Measure Symbol Unit of Measure Kbit 1024 bits °C degrees celsius KΩ kilo ohms MHz megahertz μA microamperes μf microfarads μs microseconds mA milliampere ms millisecond ns nanoseconds Ω ohms pF picofarads ps picoseconds V volts W watts CY14E256LA Page [+] Feedback ...
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... Document History Page Document Title: CY14E256LA 256-Kbit (32 K × 8) Nonvolatile SRAM Document Number: 001-54952 Orig. of Revision ECN Change ** 2748216 GVCH/PYRS *A 2772059 GVCH *B 2829117 GVCH *C 2891356 GVCH *D 2922858 GVCH *E 3030490 GVCH *F 3143330 GVCH Document Number: 001-54952 Rev. *F Submission Description of Change Date 08/04/09 ...
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... Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-54952 Rev. *F All products and company names mentioned in this document may be the trademarks of their respective holders. cypress.com/go/plc Revised January 17, 2011 CY14E256LA PSoC Solutions psoc.cypress.com/solutions PSoC 1 | PSoC 3 ...