CY14E256LA-SZ45XI Cypress Semiconductor Corp, CY14E256LA-SZ45XI Datasheet - Page 11

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CY14E256LA-SZ45XI

Manufacturer Part Number
CY14E256LA-SZ45XI
Description
IC NVSRAM 256KBIT 45NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of CY14E256LA-SZ45XI

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Operating Supply Voltage (typ)
5V
Package Type
SOIC
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
-40C to 85C
Pin Count
32
Mounting
Surface Mount
Supply Current
52mA
Memory Configuration
32K X 8
Access Time
45ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14E256LA-SZ45XI
Manufacturer:
SHARP
Quantity:
22 502
Part Number:
CY14E256LA-SZ45XI
Manufacturer:
CYPRESS
Quantity:
20 000
Part Number:
CY14E256LA-SZ45XIKU
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
CY14E256LA-SZ45XIT
Manufacturer:
CYPRESS
Quantity:
1 241
Document Number: 001-54952 Rev. *F
Note
17. WE must be HIGH during SRAM read cycles.
18. HSB must remain HIGH during READ and WRITE cycles.
19. If WE is low when CE goes low, the outputs remain in the high impedance state.
20. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Address
Data Output
Data Input
CE
OE
Address
I
WE
CE
CC
WE
IH
CE
during address transitions.
High Impedance
Standby
Figure 5. SRAM Read Cycle #2: CE and OE Controlled
Figure 6. SRAM Write Cycle #1: WE Controlled
Figure 7. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
PU
t
SA
t
LZCE
t
LZOE
t
Address Valid
AA
t
ACE
High Impedance
t
AW
t
Address Valid
PWE
t
t
t
SCE
HZWE
DOE
t
Address Valid
RC
t
Active
SCE
t
PWE
t
WC
Input Data Valid
t
WC
t
t
SD
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[18, 19, 20]
[18, 19, 20]
t
HD
t
HD
t
HA
t
HA
[17, 18]
t
t
HZCE
HZOE
t
PD
CY14E256LA
Page 11 of 19
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