CY14E256LA-SZ45XI Cypress Semiconductor Corp, CY14E256LA-SZ45XI Datasheet - Page 12

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CY14E256LA-SZ45XI

Manufacturer Part Number
CY14E256LA-SZ45XI
Description
IC NVSRAM 256KBIT 45NS 32SOIC
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of CY14E256LA-SZ45XI

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
256K (32K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Word Size
8b
Organization
32Kx8
Density
256Kb
Interface Type
Parallel
Access Time (max)
45ns
Operating Supply Voltage (typ)
5V
Package Type
SOIC
Operating Temperature Classification
Industrial
Operating Supply Voltage (max)
5.5V
Operating Supply Voltage (min)
4.5V
Operating Temp Range
-40C to 85C
Pin Count
32
Mounting
Surface Mount
Supply Current
52mA
Memory Configuration
32K X 8
Access Time
45ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
SOIC
No. Of Pins
32
Operating Temperature Range
-40°C To +85°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Manufacturer:
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Part Number:
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AutoStore/Power-up RECALL
Switching Waveforms
Document Number: 001-54952 Rev. *F
Notes
t
t
t
V
t
V
t
t
21. t
24. These parameters are guaranteed by design and are not tested.
25. Read and Write cycles are ignored during STORE, RECALL, and while V
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
22. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
23. On a Hardware STORE and AutoStore initiation, SRAM write operation continues to be enabled for time t
26. During power-up and power-down, HSB glitches when HSB pin is pulled up through an external resistor.
SWITCH
HDIS
HRECALL
[24]
[24]
[23]
[24]
[22]
Parameter
[24]
[21]
starts from the time V
Read & Write
Inhibited
(RWI)
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
V
HDIS
CC
CC
POWER-UP
Power-up RECALL duration
STORE cycle duration
Time allowed to complete SRAM write cycle
Low voltage trigger level
V
HSB output disable voltage
HSB to output active time
HSB high active time
rises above V
RECALL
CC
Note
t
VCCRISE
rise time
26
SWITCH.
Figure 8. AutoStore or Power-up RECALL
Read & Write
t
t
t
LZHSB
HRECALL
HHHD
Description
Note
AutoStore
t
BROWN
DELAY
CC
22
OUT
is less than V
t
STORE
POWER-UP
RECALL
SWITCH.
t
HRECALL
t
t
HHHD
LZHSB
DELAY
Read & Write
[25]
.
t
DELAY
Min
150
CY14E256LA
Note
AutoStore
POWER
DOWN
22
CY14E256LA
Note
t
STORE
Max
500
4.4
1.9
20
25
8
5
26
Page 12 of 19
Unit
ms
ms
ns
µs
µs
ns
V
V
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