CY14E256LA-SZ25XI Cypress Semiconductor Corp, CY14E256LA-SZ25XI Datasheet - Page 11

• Manufacturer Part Number: CY14E256LA-SZ25XI
• Description: IC NVSRAM 256KBIT 25NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14E256LA-SZ25XI

• Memory Size: 256K (32K x 8)
• Package / Case: *
• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Organization: 32 K x 8
• Access Time: 25 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Operating Current: 70 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 001-54952 Rev. *D
Note
16. CE or WE must be > V
Data Output
Data Output
Data Input
Address
Address
Data Output
Data Input
CE
OE
Address
I
WE
CE
CC
WE
IH
CE
during address transitions.
High Impedance
Standby
Figure 5. SRAM Read Cycle #2: CE and OE Controlled
Figure 6. SRAM Write Cycle #1: WE Controlled
Figure 7. SRAM Write Cycle #2: CE Controlled
Previous Data
t
SA
t
PU
t
SA
t
LZCE
t
LZOE
t
Address Valid
AA
t
ACE
High Impedance
t
AW
t
Address Valid
t
t
PWE
t
DOE
SCE
HZWE
t
RC
Active
Address Valid
t
SCE
t
PWE
t
WC
Input Data Valid
t
WC
t
SD
t
High Impedance
SD
Input Data Valid
Output Data Valid
t
LZWE
[14, 15, 16]
[14, 15, 16]
t
t
HD
HD
t
HA
t
HA
[11, 15]
t
t
HZCE
HZOE
t
PD
CY14E256LA
Page 11 of 18
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