CY14E256LA-SZ25XI Cypress Semiconductor Corp, CY14E256LA-SZ25XI Datasheet - Page 9

• Manufacturer Part Number: CY14E256LA-SZ25XI
• Description: IC NVSRAM 256KBIT 25NS 32SOIC
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY14E256LA-SZ25XI

• Memory Size: 256K (32K x 8)
• Package / Case: *
• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Speed: 25ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Organization: 32 K x 8
• Access Time: 25 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Operating Current: 70 mA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Data Retention and Endurance
Capacitance
Thermal Resistance
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <3 ns
Input and Output Timing Reference Levels .................... 1.5V
Note
Document Number: 001-54952 Rev. *D
DATA
NV
C
C
10. These parameters are guaranteed by design and are not tested.
IN
OUT
Parameter
Parameter
C
Parameter
R
OUTPUT
Θ
Θ
JA
JC
5.0V
[10]
[10]
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Input Capacitance
Output Capacitance
30 pF
Data Retention
Nonvolatile STORE Operations
Description
Description
963Ω
R1
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
T
V
A
CC
512Ω
Figure 3. AC Test Loads
= 25°C, f = 1 MHz,
Description
= V
R2
CC
(Typ)
Test Conditions
Test Conditions
OUTPUT
5.0V
5 pF
963Ω
44-TSOP II 32-SOIC
R1
41.74
11.90
1,000
Max
Min
20
7
7
CY14E256LA
for tri-state specs
512Ω
41.55
24.43
R2
Page 9 of 18
Years
Unit
Unit
pF
pF
K
°C/W
°C/W
Unit
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