M48Z128-70PM1 STMicroelectronics, M48Z128-70PM1 Datasheet - Page 4

• Manufacturer Part Number: M48Z128-70PM1
• Description: IC NVSRAM 1MBIT 70NS 32DIP
• Manufacturer: STMicroelectronics

Specifications of M48Z128-70PM1

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1M (128K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.75 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP (600 mil) Module
• Data Bus Width: 8 bit
• Organization: 128 Kb x 8
• Interface Type: Parallel
• Access Time: 70 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.75 V
• Operating Current: 105 mA
• Maximum Operating Temperature: 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: Through Hole
• Memory Configuration: 128K X 8
• Nvram Features: Internal Battery
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: DIP
• No. Of Pins: 32
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-2873-5

M48Z128, M48Z128Y, M48Z128V*
DESCRIPTION
The M48Z128/Y/V ZEROPOWER
128 Kbit x 8 non-volatile static RAM organized
as131,072 words by 8 bits. The device combines
an internal lithium battery, a CMOS SRAM and a
control circuit in a plastic, 32-pin DIP module. This
solution is available in two special packages to
provide a highly integrated battery backed-up
memory solution.
The M48Z128/Y/V is a non-volatile pin and func-
tion equivalent to any JEDEC standard 128K x 8
SRAM. It also easily fits into many ROM, EPROM,
and EEPROM sockets, providing the non-volatility
of PROMs without any requirement for special
WRITE timing or limitations on the number of
WRITEs that can be performed. The 32-pin,
600mil DIP Module houses the M48Z128/Y/V sili-
con with a long life lithium button cell in a single
package.
For surface-mount environments ST provides an
equivalent SMT solution consisting of a 28-pin,
330mil SOIC NVRAM SUPERVISOR (M40Z300/
Figure 2. Logic Diagram
4/21
A0-A16
W
G
E
17
V CC
M48Z128Y
M48Z128V
V SS
M48Z128
8
®
RAM is a
DQ0-DQ7
AI01194
W) and a 32-pin, (TSOP, 8 x 20mm) 1Mb
LPSRAM. Both 5V and 3V versions are available
(see
The 28-pin, 330mil SOIC provides sockets with
gold plated contacts at both ends for direct con-
nection to a separate SNAPHAT
taining the battery.
The unique design allows the SNAPHAT battery
package to be mounted on top of the SOIC pack-
age after the completion of the surface-mount pro-
cess. Insertion of the SNAPHAT housing after
reflow prevents potential battery damage due to
the high temperatures required for device surface-
mounting. The SNAPHAT housing is keyed to pre-
vent reverse insertion.
The SNAPHAT battery package is shipped sepa-
rately in plastic anti-static tubes or in Tape & Reel
form. The part number is “M4Zxx-BR00SH” (see
Table 17., page
Table 1. Signal Names
DQ0-DQ7
Table 2., page
A0-A16
V
V
NC
W
G
E
CC
SS
19).
6).
Address Inputs
Data Inputs / Outputs
Chip Enable Input
Output Enable Input
WRITE Enable Input
Supply Voltage
Ground
Not Connected Internally
®
housing con-