AT28LV010-20JI Atmel, AT28LV010-20JI Datasheet

IC EEPROM 1MBIT 200NS 32PLCC

AT28LV010-20JI

Manufacturer Part Number
AT28LV010-20JI
Description
IC EEPROM 1MBIT 200NS 32PLCC
Manufacturer
Atmel
Datasheet

Specifications of AT28LV010-20JI

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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AT28LV010-20JI
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Quantity:
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Features
Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-
mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 20 µA.
Pin Configurations
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
DC
Single 3.3V
Fast Read Access Time - 200 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
JEDEC Approved Byte-Wide Pinout
Commercial and Industrial Temperature Ranges
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Endurance: 100,000K Cycles
– Data Retention: 10 Years
GND
I/O0
I/O1
I/O2
A16
A15
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PDIP
10% Supply
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
VCC
A11
A13
A14
A16
A15
A12
WE
NC
NC
A9
A8
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
I/O0
A7
A6
A5
A4
A3
A2
A1
A0
Top View
5
6
7
8
9
10
11
12
13
TSOP
Top View
PLCC
29
28
27
26
25
24
23
22
21
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
(continued)
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
1-Megabit
(128K x 8)
Low Voltage
Paged Parallel
EEPROMs
AT28LV010
Rev. 0395B–10/98
1

Related parts for AT28LV010-20JI

AT28LV010-20JI Summary of contents

Page 1

... Commercial and Industrial Temperature Ranges Description The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program- mable Read Only Memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µ ...

Page 2

... The AT28LV010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writ- ing 128 bytes simultaneously. During a write cycle, the address and 1 to 128 bytes of data are internally latched, freeing the address and data bus for other opera- tions ...

Page 3

... high. This dual- line control gives designers flexibility in preventing bus con- tention in their system. WRITE: The write operation of the AT28LV010 allows 1 to 128 bytes of data to be written into the device during a sin- gle internal programming period. Each write operation must be preceded by the software data protection (SDP) com- mand sequence ...

Page 4

... IH V Output Low Voltage OL V Output High Voltage OH AT28LV010 4 AT28LV010-20 0°C - 70°C -40°C - 85° Condition I/O CC Com 0. Ind MHz mA 3.6V OUT 1 -100 3. AT28LV010-25 0°C - 70°C -40°C - 85°C 3.3V 10 OUT High High Z Min Max Units 0.8 V 2.0 V 0.45 V 2.4 V ...

Page 5

... OUT Note: 1. This parameter is characterized and is not 100% tested after the address transition without impact on t ACC after the falling edge of CE without impact pF). L Output Test Load Max 6 12 AT28LV010-20 AT28LV010-25 Min Max Min 200 200 ACC after an address change ...

Page 6

... Chip Select Set-up Time CS t Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH Note: 1. All write operations must be preceded by the SDP command sequence. AC Write Waveforms WE Controlled CE Controlled AT28LV010 6 (1) Min Max Units 0 ns 100 200 ns 100 ...

Page 7

Software Protected Write Characteristics Symbol Parameter t Write Cycle Time WC t Address Set-up Time AS t Address Hold Time AH t Data Set-up Time DS t Data Hold Time DH t Write Pulse Width WP t Byte Load Cycle ...

Page 8

... These parameters are characterized and not 100% tested. 2. See AC Read Characteristics Toggle Bit Waveforms Notes: 1. Toggling either both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. AT28LV010 8 (1) (1) Min Typ Max ...

Page 9

... Plastic J-Leaded Chip Carrier (PLCC) 32P6 32-Lead, 0.600” Wide, Plastic Dual Inline Package (PDIP) 32T 32-Lead, Plastic Thin Small Outline Package (TSOP) Ordering Code AT28LV010-20JC AT28LV010-20PC AT28LV010-20TC AT28LV010-20JI AT28LV010-20PI AT28LV010-20TI AT28LV010-25JC AT28LV010-25PC AT28LV010-25TC AT28LV010-25JI AT28LV010-25PI AT28LV010-25TI Package and Temperature Combinations ...

Page 10

... REF 8.20(.323) 7.80(.307) 0.15(.006) 0.05(.002 REF 0.70(.028) 0.50(.020) *Controlling dimension: millimeters AT28LV010 10 32P6, 32-Lead, 0.600” Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) .025(.635 .012(.305) .008(.203) .530(13.5 .490(12.4 ...

Page 11

11 ...

Page 12

... No licenses to patents or other intellectual prop Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life suppor t devices or systems. ...

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