AT45CS1282-TC Atmel, AT45CS1282-TC Datasheet - Page 5

• Manufacturer Part Number: AT45CS1282-TC
• Description: IC FLASH 128MBIT 50MHZ 40TSOP
• Manufacturer: Atmel

Specifications of AT45CS1282-TC

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 128M (16,384 pages x 1056 bytes)
• Speed: 50MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 40-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Program and Erase Commands
3447A–DFLSH–2/04
BUFFER WRITE: Data can be clocked in from the input pins (SI or I/O7 - I/O0) into
either buffer 1 or buffer 2. To load data into either buffer, a 1-byte opcode, 84H for buffer
1 or 87H for buffer 2, must be clocked into the device, followed by four address bytes
comprised of 21 don’t care bits and 11 buffer address bits (BFA10 - BFA0). The 11
buffer address bits specify the first byte in the buffer to be written. After the last address
byte has been clocked into the device, data can then be clocked in on subsequent clock
cycles. If the end of the data buffer is reached, the device will wrap around back to the
beginning of the buffer. Data will continue to be loaded into the buffer until a low-to-high
transition is detected on the CS pin.
BUFFER TO MAIN MEMORY PAGE PROGRAM: A previously-erased page within main
memory can be programmed with the contents of either buffer 1 or buffer 2. The pro-
gramming time is selectable by the system through the use of different opcodes
between a normal mode and a fast mode (the fast program option will consume more
current). A 1-byte opcode, 88H for buffer 1 or 89H for buffer 2 (98H for buffer 1 fast pro-
gram or 99H for buffer 2 fast program), must be clocked into the device followed by four
address bytes consisting of 7 don’t care bits, 14-page address bits (PA13 - PA0) that
specify the page in the main memory to be written and 11 don’t care bits. When a low-to-
high transition occurs on the CS pin, the part will program the data stored in the buffer
into the specified page in the main memory. It is necessary that the page in main mem-
ory that is being programmed has been previously erased using the sector erase
commands. The programming of the page is internally self-timed and should take place
in a maximum time of t
time, the status register and the RDY/BUSY pin will indicate that the part is busy.
SECTOR ERASE: The Sector Erase command can be used to individually erase any
sector in the main memory. There are 65 sectors and only one sector can be erased at
one time. Sector 0a requires a different opcode than sectors 0b-63. To perform a sector
0a erase, an opcode of 50h must be loaded into the device, followed by four address
bytes comprised of 7 don’t care bits, 11-page address bits (PA13 - PA3) and 14 don’t
care bits. To perform a sector 0b-63 erase, an opcode of 7Ch must be loaded into the
device, followed by four address bytes comprised of 7 don’t care bits, 6-page address
bits (PA13 - PA8) and 19 don’t care bits. The 6-page address bits are used to specify
which sector is to be erased. Refer to Sector Erase addressing table. When a low-to-
high transition occurs on the CS pin, the part will erase the selected sector. The erase
operation is internally self-timed and should take place in a maximum time of t
this time, the status register and the RDY/BUSY pin will indicate that the part is busy.
P
for normal programming or t
AT45CS1282 [Preliminary]
FP
for fast programming. During this
SE
. During
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