AT49LH004-33JC SL383 Atmel, AT49LH004-33JC SL383 Datasheet - Page 26

• Manufacturer Part Number: AT49LH004-33JC SL383
• Description: IC FLASH 4MBIT 33MHZ 32PLCC
• Manufacturer: Atmel

Specifications of AT49LH004-33JC SL383

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 33MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 85°C
• Package / Case: 32-PLCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

16. Command Definitions Table
Notes:
16.1
16.2
26
Command
Read Array
Sector Erase
Uniform Sector
Erase
Byte Program
Read Status Register
Clear Status Register
Product ID Read
(1)(2)
1. The sector must not be hardware write protected or write-locked when attempting sector erase or program operations.
2. Sub-sectors are sectors 10, 9, 8, and 7; the main sectors are sectors 6 through 0. Refer to the Device Memory Map and
3. Either 40H or 10H is recognized by the device as the byte program command.
4. Following the Product ID Read command, read operations will access manufacturer and device ID information. Refer to
Read Array
Sector Erase
AT49LH004
Attempts to issue a sector erase or byte program command to a hardware write protected or write-locked sector will fail.
Table 11-1
one time to allow uniform 64-Kbyte sectors to be erased. A Uniform Sector Erase command issued to any address in any
one of the sub-sectors will cause all the sub-sectors to be erased provided that all of the sub-sectors are not protected or
write-locked. The standard Sector Erase command can be used to individually erase both the sub-sectors and the main
sectors, allowing a single erase command to be used to erase any sector in the memory array.
Table 16-2
(1)(2)
(1)(3)
(4)
for sector sizes and address ranges. The Uniform Sector Erase command can be used to erase all sub-sectors at
for Product ID addresses and data.
Command
Cycles
1+
Upon initial device power-up and after exit from reset, the device defaults to the read array
mode. This operation is also initiated by writing the Read Array command. The device remains
enabled for reads until another command is written to the device.
Once the internal write state machine (WSM) has started a sector erase or program operation,
the device will not recognize the Read Array command until the operation is completed.
Before a byte can be programmed into a sector, the sector must first be erased. The memory
array is organized into multiple sectors that can be individually erased using two different sec-
tor erase commands, Sector Erase and Uniform Sector Erase. The Uniform Sector Erase
command can be used to erase the main sectors, and it can also be used to erase all of the
sub-sectors to allow the memory array to be erased in uniform 64-Kbyte regions. The Sector
Erase command is used to erase the individual sub-sectors to provide a more efficient and
finer erase granularity. In addition, the Sector Erase command can be used to erase the main
sectors as well to allow a single erase command to be used to erase any sector in the memory
array. Both sector erase commands require two command cycles to initiate the internally self-
timed erase operation.
2
2
2
2
1
2
Type
Write
Write
Write
Write
Write
Write
Write
1st Command Cycle
Address
Any Address
Any Address in
the Sector
Any Address in
the Sector
The Address to
be Programmed
Any Address
Any Address
Any Address
40H or
Data
FFH
21H
20H
10H
70H
50H
90H
Type
Read
Write
Write
Write
Read
Read
2nd Command Cycle
Address
Any Address
Any Address in
the Sector
Any Address in
the Sector
The Address to
be Programmed
Any Address
ID Address
3383D–FLASH–6/05
Data OUT
Register
Data IN
ID Data
Status
Data
Data
D0H
D0H