MT46H8M16LFCF-10 IT TR Micron Technology Inc, MT46H8M16LFCF-10 IT TR Datasheet - Page 59

• Manufacturer Part Number: MT46H8M16LFCF-10 IT TR
• Description: IC DDR SDRAM 128MBIT 60VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT46H8M16LFCF-10 IT TR

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 100MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 36:
PDF: 09005aef8199c1ec/Source: 09005aef81a19319
MT46H8M16LF_1.fm - Rev. K 7/07 EN
COMMAND
A0–A9, A11
BA0, BA1
DQS
A10
DM
DQ
CK#
CKE
CK
5
5
5
1
1
1
1
Auto Refresh Mode
t
t
IS
IS
NOP 2
T0
Notes:
t
t
IH
IH
ALL BANKS
ONE BANK
t
Bank(s) 4
IS
1. PRE = PRECHARGE, ACT = ACTIVE, AR = AUTO REFRESH, RA = Row address, BA = Bank
2. NOP commands are shown for ease of illustration; other valid commands may be possible at
3. NOP or COMMAND INHIBIT are the only commands allowed until after
4. “Don’t Care” if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active
5. DM, DQ, and DQS signals are all “Don’t Care”/High-Z for operations shown.
6. The second AUTO REFRESH is not required and is only shown as an example of two back-to-
PRE
T1
t
IH
address.
these times. CKE must be active during clock positive transitions.
be active during clock positive transitions.
(i.e., must precharge all active banks).
back AUTO REFRESH commands.
CK
VALID
NOP 2
T2
t
CH
t RP
t
CL
NOP 2
T3
59
T4
AR
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128Mb: 8 Meg x 16 Mobile DDR SDRAM
t RFC
Micron Technology, Inc., reserves the right to change products or specifications without notice.
NOP 2, 3
Ta0
Ta1
AR 6
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VALID
NOP 2, 3
Tb0
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RFC 6
NOP 2
Tb1
t
RFC time, CKE must
DON’T CARE
Tb2
ACT
RA
RA
BA