MT47H64M8CB-37E IT:B Micron Technology Inc, MT47H64M8CB-37E IT:B Datasheet - Page 29

• Manufacturer Part Number: MT47H64M8CB-37E IT:B
• Description: IC DDR2 SDRAM 512MBIT 60FBGA
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M8CB-37E IT:B

• Format - Memory: RAM
• Memory Type: DDR2 SDRAM
• Memory Size: 512M (64M x 8)
• Speed: 3.75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 60-FBGA
• Organization: 64Mx8
• Density: 512Mb
• Address Bus: 16b
• Access Time (max): 500ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 145mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 7: Thermal Impedance
PDF: 09005aef82f1e6e2
Rev. M 9/08 EN
Die Revision
B
D
F
1
1
1
Package Substrate
60-ball
84-ball
60-ball
84-ball
60-ball
84-ball
Note:
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
2-layer
4-layer
1. Thermal resistance data is based on a number of samples from multiple lots and should
be viewed as a typical number.
Airflow = 0m/s
Θ JA (°C/W)
53.2
37.4
50.2
34.9
56.9
40.6
56.8
40.3
71.4
53.6
65.8
50.0
Airflow = 1m/s
Electrical Specifications – Absolute Ratings
29
Θ JA (°C/W)
40.0
30.9
36.8
28.0
43.6
34.1
43.8
33.2
54.1
44.5
50.4
41.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
Θ JA (°C/W)
Airflow = 2m/s Θ JB (°C/W) Θ JC (°C/W)
37.2
27.7
32.1
25.5
38.5
31.3
37.7
30.4
47.5
40.5
44.3
37.7
© 2004 Micron Technology, Inc. All rights reserved.
27.5
24.2
24.5
21.3
30.6
27.0
24.8
23.5
33.7
33.5
30.7
30.5
2.9
3.1
3.8
3.9
5.5
4.1