MT48H8M16LFB4-8 IT:J TR Micron Technology Inc, MT48H8M16LFB4-8 IT:J TR Datasheet - Page 50

• Manufacturer Part Number: MT48H8M16LFB4-8 IT:J TR
• Description: IC SDRAM 128MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H8M16LFB4-8 IT:J TR

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1236-2

Figure 26:
PDF: 09005aef832ff1ea/Source: 09005aef832ff1ac
sdr_mobile_sdram_cmd_op_timing_dia_fr10_08__3.fm - Rev. E 4/09 EN
Command
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Row
Row
Bank
READ – DQM Operation
t CMH
t AH
t AH
t AH
t CKH
Notes:
t RCD
t CK
T1
NOP
1. For this example, BL = 4 and CL = 2.
Enable auto precharge
Disable auto precharge
t CMS
t CL
Column m
T2
READ
Bank
t CH
t CMH
CL = 2
T3
NOP
t LZ
t AC
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
50
T4
NOP
Dout m
t OH
t HZ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T5
NOP
t LZ
t AC
Dout m + 2
T6
NOP
t OH
t AC
©2008 Micron Technology, Inc. All rights reserved.
Dout m + 3
T7
NOP
Timing Diagrams
t OH
t HZ
T8
NOP
Don’t Care
Undefined