IS42S83200B-6T-TR ISSI, Integrated Silicon Solution Inc, IS42S83200B-6T-TR Datasheet - Page 5

• Manufacturer Part Number: IS42S83200B-6T-TR
• Description: IC SDRAM 256MBIT 166MHZ 54TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S83200B-6T-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 256M (32M x 8)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-TSOP II
• Organization: 32Mx8
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 170mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS42S83200B,
PIN CONFIGURATION
54-ball fBGA for x16 (Top View) (8.00 mm x 13.00 mm Body, 0.8 mm Ball Pitch)
PACKAGE CODE: B
PIN DESCRIPTIONS
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
07/28/08
A0-A12
A0-A8
BA0, BA1
DQ0 to DQ15
CLK
CKE
CS
RAS
CAS
Row Address Input
Column Address Input
Bank Select Address
Data I/O
System Clock Input
Clock Enable
Chip Select
Row Address Strobe Command
Column Address Strobe Command
IS42S16160B
C
D
G
H
A
B
E
F
J
DQMH
1 2 3 4 5 6 7 8 9
DQ14
DQ12
DQ10
VSS
DQ8
VSS
A12
A8
DQ15
DQ13
DQ11
DQ9
CLK
A11
NC
A7
A5
VDDQ
VDDQ
VSSQ
VSSQ
VSS
CKE
A9
A6
A4
WE
DQML
DQMH
V
Vss
V
Vss
NC
DD
DDQ
Q
VDDQ
VDDQ
VSSQ
VSSQ
VDD
CAS
BA0
A0
A3
DQML
DQ0
DQ2
DQ4
DQ6
RAS
BA1
A1
A2
Write Enable
x16 Lower Byte Input/Output Mask
x16 Upper Byte Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
VDD
DQ1
DQ3
DQ5
DQ7
VDD
A10
WE
CS
5